High density photodiodes

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO

7655999

APP PUB NO

20080067622A1

SERIAL NO

11532191

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA36

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, US 47 776
Taneja, Narayan Dass Long Beach, US 47 804

Cited Art Landscape

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UDT Sensors, Inc. (1)
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UNIVERSITY OF HAWAII (2)
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2008/0067,622 HIGH DENSITY PHOTODIODES 38 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 26 2007
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EASTMAN KODAK COMPANY (1)
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NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
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Shipley Company, L.L.C. (1)
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* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (10)
* 8003425 Methods for forming anti-reflection structures for CMOS image sensors 7 2008
* 2009/0286,346 Methods For Forming Anti-Reflection Structures For CMOS Image Sensors 26 2008
* 7897434 Methods of fabricating solar cell chips 0 2008
* 2010/0037,939 METHODS OF FABRICATING SOLAR CELL CHIPS 7 2008
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* 2010/0264,473 ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS 10 2010
* 2010/0304,519 METHOD OF FABRICATING SOLAR CELL CHIPS 3 2010
8409904 Methods for forming anti-reflection structures for CMOS image sensors 2 2011
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SOLEXEL, INC. (1)
9515217 Monolithically isled back contact back junction solar cells 0 2014
 
OSI OPTOELECTRONICS, INC. (9)
* 9178092 Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays 0 2012
* 2014/0093,994 FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS 4 2012
8816464 Photodiode and photodiode array with improved performance characteristics 0 2012
8912615 Shallow junction photodiode for detecting short wavelength light 0 2013
8698197 Tetra-lateral position sensing detector 1 2013
8907440 High speed backside illuminated, front side contact photodiode array 0 2013
9214588 Wavelength sensitive sensor photodiodes 0 2014
9147777 Tetra-lateral position sensing detector 0 2014
9035412 Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same 0 2014
 
EXCELITAS CANADA, INC. (1)
* 2008/0012,087 Bonded wafer avalanche photodiode and method for manufacturing same 1 2007
* Cited By Examiner

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