High density photodiodes

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7655999
APP PUB NO 20080067622A1
SERIAL NO

11532191

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA35

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, US 47 902
Taneja, Narayan Dass Long Beach, US 47 925

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MARCONI MEDICAL SYSTEMS, INC. (1)
6510195 Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same 177 2001
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
6326300 Dual damascene patterned conductor layer formation method 53 1998
 
IMATION CORP. (1)
5254480 Process for producing a large area solid state radiation detector 129 1992
 
UNIVERSAL DISPLAY CORPORATION (1)
5656508 Method of making two dimensional organic light emitting diode array for high density information image manifestation apparatus 45 1996
 
UDT SENSORS, INC. (1)
7279731 Edge illuminated photodiodes 35 2006
 
HAMAMATSU PHOTONICS K.K. (2)
* 6853046 Photodiode array and method of making the same 25 2003
2006/0278,898 Backside-illuminated photodetector and method for manufacturing same 69 2004
 
SAMSUNG ELECTRONICS CO., LTD. (1)
2004/0241,897 Edge-illuminated refracting-facet type light receiving device and method for manufacturing the same 32 2003
 
INTEVAC, INC. (1)
5576559 Heterojunction electron transfer device 42 1994
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
4887140 Clover design lateral effect position-sensitive device 46 1989
 
University of Hawaii (2)
5237197 Integrated VLSI radiation/particle detector with biased pin diodes 44 1991
5889313 Three-dimensional architecture for solid state radiation detectors 40 1997
 
NEC CORPORATION (2)
5825047 Optical semiconductor device 62 1994
6546171 Structure for shielding stray light in optical waveguide module 43 2001
 
UNITED MICROELECTRONICS CORP. (1)
6569700 Method of reducing leakage current of a photodiode 51 2001
 
Semicoa Semiconductors (1)
7112465 Fabrication methods for ultra thin back-illuminated photodiode array 45 2004
 
MARCONI MEDCICAL SYSTEMS, INC. (1)
6426991 Back-illuminated photodiodes for computed tomography detectors 109 2000
 
Osmic, Inc. (1)
5923720 Angle dispersive x-ray spectrometer 97 1997
 
SITEK ELECTRO OPTICS AB (1)
5869834 Photodetector having an integrated function for elimination of the effects of stray light 44 1997
 
KABUSHIKI KAISHA TOSHIBA (1)
5599389 Compound semiconductor and method of manufacturing the same 42 1994
 
WINBOND ELECTRONICS CORP. (1)
6826080 Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor 52 2002
 
LOCKHEED MARTIN CORPORATION (1)
6438296 Fiber optic taper coupled position sensing module 40 2000
 
SUNIVA (1)
5928438 Structure and fabrication process for self-aligned locally deep-diffused emitter (SALDE) solar cell 111 1996
 
CANON KABUSHIKI KAISHA (1)
5252142 Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps 75 1991
 
GENERAL ELECTRIC COMPANY (1)
6504158 Imaging array minimizing leakage currents 40 2000
 
SPECTRAL MD, INC. (1)
6352517 Optical monitor of anatomical movement and uses thereof 83 1999
 
LUCENT TECHNOLOGIES INC. (1)
6326649 Pin photodiode having a wide bandwidth 89 1999
 
U.S. PHILIPS CORPORATION (1)
4904608 Pin photodiode having a low leakage current 49 1989
 
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) (1)
4874939 Method and apparatus for detecting position/variance of input light using linear and quadratic outputs 51 1987
 
SENSORS UNLIMITED, INC. (1)
6489635 Epitaxially grown p-type diffusion source for photodiode fabrication 43 2001
 
SILICON GRAPHICS INTERNATIONAL CORP. (1)
5276955 Multilayer interconnect system for an area array interconnection using solid state diffusion 63 1992
 
SANTA BARBARA RESEARCH CENTER (1)
5049962 Control of optical crosstalk between adjacent photodetecting regions 42 1990
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
5214276 Semiconductor structure for photodetector 48 1991
6218684 Photodiode with buffer layer 42 1998
 
FUJITSU LIMITED (1)
5144379 Semiconductor device having a group III-V epitaxial semiconductor layer on a substrate 51 1991
 
SILICON LABORATORIES INC. (1)
6027956 Process for producing planar dielectrically isolated high speed pin photodiode 65 1998
 
MOTOROLA, INC. (1)
5501990 High density LED arrays with semiconductor interconnects 45 1995
 
DIGIRAD CORPORATION (2)
6670258 Fabrication of low leakage-current backside illuminated photodiodes 79 2001
6734416 Fabrication of low leakage-current backside illuminated photodiodes 68 2002
 
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY (1)
5446751 Optoelectronic device 45 1992
 
DELPHI TECHNOLOGIES, INC. (1)
6772729 Swirl port system for a diesel engine 41 2002
 
OSI OPTOELECTRONICS, INC. (9)
6593636 High speed silicon photodiodes and method of manufacture 45 2000
7057254 Front illuminated back side contact thin wafer detectors 42 2004
2008/0128,846 Thin wafer detectors with improved radiation damage and crosstalk characteristics 50 2005
2007/0090,394 Deep diffused thin photodiodes 33 2005
2006/0255,420 Front illuminated back side contact thin wafer detectors 31 2006
2007/0278,534 LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY 30 2006
2008/0067,622 HIGH DENSITY PHOTODIODES 40 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 28 2007
2007/0296,005 Edge Illuminated Photodiodes 28 2007
 
EASTMAN KODAK COMPANY (1)
5408122 Vertical structure to minimize settling times for solid state light detectors 43 1993
 
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
5818096 Pin photodiode with improved frequency response and saturation output 58 1997
 
AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD. (2)
4904861 Optical encoder using sufficient inactive photodetectors to make leakage current equal throughout 50 1988
4998013 Optical encoder with inactive photodetectors 46 1989
 
AGILENT TECHNOLOGIES, INC. (1)
5430321 Photodiode structure 56 1994
 
Shipley Company, L.L.C. (1)
5053318 Plasma processing with metal mask integration 88 1989
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (10)
* 8003425 Methods for forming anti-reflection structures for CMOS image sensors 7 2008
* 2009/0286,346 Methods For Forming Anti-Reflection Structures For CMOS Image Sensors 30 2008
* 7897434 Methods of fabricating solar cell chips 0 2008
* 2010/0037,939 METHODS OF FABRICATING SOLAR CELL CHIPS 7 2008
8138534 Anti-reflection structures for CMOS image sensors 8 2010
* 2010/0264,473 ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS 15 2010
* 2010/0304,519 METHOD OF FABRICATING SOLAR CELL CHIPS 3 2010
8409904 Methods for forming anti-reflection structures for CMOS image sensors 2 2011
8716771 Anti-reflection structures for CMOS image sensors 0 2012
8742560 Anti-reflection structures for CMOS image sensors 1 2013
 
OB REALTY, LLC (1)
9515217 Monolithically isled back contact back junction solar cells 0 2014
 
OSI OPTOELECTRONICS, INC. (11)
* 9178092 Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays 0 2012
* 2014/0093,994 FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS 6 2012
8816464 Photodiode and photodiode array with improved performance characteristics 0 2012
8912615 Shallow junction photodiode for detecting short wavelength light 0 2013
8698197 Tetra-lateral position sensing detector 1 2013
8907440 High speed backside illuminated, front side contact photodiode array 0 2013
9214588 Wavelength sensitive sensor photodiodes 0 2014
9147777 Tetra-lateral position sensing detector 0 2014
9035412 Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same 0 2014
9691934 Shallow junction photodiode for detecting short wavelength light 0 2014
9577121 Tetra-lateral position sensing detector 0 2015
 
EXCELITAS CANADA, INC. (1)
* 2008/0012,087 Bonded wafer avalanche photodiode and method for manufacturing same 1 2007
* Cited By Examiner

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