US Patent No: 7,655,999

Number of patents in Portfolio can not be more than 2000

High density photodiodes

ALSO PUBLISHED AS: 20080067622
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Abstract

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The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA37

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, CA 76 549
Taneja, Narayan Dass Long Beach, CA 77 594

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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UDT SENSORS, INC. (1)
7,279,731 Edge illuminated photodiodes 29 2006
 
HAMAMATSU PHOTONICS K.K. (2)
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SAMSUNG ELECTRONICS CO., LTD. (1)
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NEC CORPORATION (2)
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Semicoa Semiconductors (1)
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SUNIVA (1)
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OSI OPTOELECTRONICS, INC. (9)
6,593,636 High speed silicon photodiodes and method of manufacture 38 2000
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2008/0067,622 HIGH DENSITY PHOTODIODES 30 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 22 2007
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EASTMAN KODAK COMPANY (1)
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NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
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Shipley Company, L.L.C. (1)
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* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (6)
* 8,003,425 Methods for forming anti-reflection structures for CMOS image sensors 4 2008
* 7,897,434 Methods of fabricating solar cell chips 0 2008
8,138,534 Anti-reflection structures for CMOS image sensors 2 2010
8,409,904 Methods for forming anti-reflection structures for CMOS image sensors 2 2011
8,716,771 Anti-reflection structures for CMOS image sensors 0 2012
8,742,560 Anti-reflection structures for CMOS image sensors 0 2013
 
OSI OPTOELECTRONICS, INC. (6)
* 2014/0093,994 FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS 1 2012
8,816,464 Photodiode and photodiode array with improved performance characteristics 0 2012
8,912,615 Shallow junction photodiode for detecting short wavelength light 0 2013
8,698,197 Tetra-lateral position sensing detector 0 2013
8,907,440 High speed backside illuminated, front side contact photodiode array 0 2013
9,035,412 Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same 0 2014
 
EXCELITAS CANADA, INC. (1)
* 2008/0012,087 Bonded wafer avalanche photodiode and method for manufacturing same 1 2007
* Cited By Examiner

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