US Patent No: 7,655,999

Number of patents in Portfolio can not be more than 2000

High density photodiodes

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ALSO PUBLISHED AS: 20080067622
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Abstract

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The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA35

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, CA 64 358
Taneja, Narayan Dass Long Beach, CA 66 385

Cited Art Landscape

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2006/0255,420 Front illuminated back side contact thin wafer detectors 21 2006
2007/0278,534 LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY 19 2006
2008/0067,622 HIGH DENSITY PHOTODIODES 25 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 19 2007
2007/0296,005 Edge Illuminated Photodiodes 19 2007
 
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Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (4)
8,003,425 Methods for forming anti-reflection structures for CMOS image sensors 2 2008
7,897,434 Methods of fabricating solar cell chips 0 2008
8,138,534 Anti-reflection structures for CMOS image sensors 0 2010
8,409,904 Methods for forming anti-reflection structures for CMOS image sensors 0 2011
 
OSI OPTOELECTRONICS, INC. (1)
8,698,197 Tetra-lateral position sensing detector 0 2013

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