US Patent No: 7,655,999

Number of patents in Portfolio can not be more than 2000

High density photodiodes

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ALSO PUBLISHED AS: 20080067622
ATTORNEY / AGENT: (SPONSORED)
 

Importance

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Abstract

The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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First Claim

Related Publications

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA29

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, CA 51 274
Taneja, Narayan Dass Long Beach, CA 52 287

Cited Art

Patent Info (Count) # Cites Year
 
OSI OPTOELECTRONICS, INC. (9)
6,593,636 High speed silicon photodiodes and method of manufacture 25 2000
7,057,254 Front illuminated back side contact thin wafer detectors 25 2004
2008/0128,846 Thin wafer detectors with improved radiation damage and crosstalk characteristics 24 2005
2007/0090,394 Deep diffused thin photodiodes 18 2005
2006/0255,420 Front illuminated back side contact thin wafer detectors 17 2006
2007/0278,534 LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY 17 2006
2008/0067,622 HIGH DENSITY PHOTODIODES 21 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 17 2007
2007/0296,005 Edge Illuminated Photodiodes 17 2007
 
AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD. (2)
4,904,861 Optical encoder using sufficient inactive photodetectors to make leakage current equal throughout 31 1988
4,998,013 Optical encoder with inactive photodetectors 30 1989
 
DIGIRAD CORPORATION (2)
6,670,258 Fabrication of low leakage-current backside illuminated photodiodes 35 2001
6,734,416 Fabrication of low leakage-current backside illuminated photodiodes 27 2002
 
HAMAMATSU PHOTONICS K.K. (2)
6,853,046 Photodiode array and method of making the same 7 2003
2006/0278,898 Backside-illuminated photodetector and method for manufacturing same 19 2004
 
NEC CORPORATION (2)
5,825,047 Optical semiconductor device 44 1994
6,546,171 Structure for shielding stray light in optical waveguide module 26 2001
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
5,214,276 Semiconductor structure for photodetector 30 1991
6,218,684 Photodiode with buffer layer 26 1998
 
UNIVERSITY OF HAWAII (2)
5,237,197 Integrated VLSI radiation/particle detector with biased pin diodes 27 1991
5,889,313 Three-dimensional architecture for solid state radiation detectors 25 1997
 
AGILENT TECHNOLOGIES, INC. (1)
5,430,321 Photodiode structure 34 1994
 
BELL TELEPHONE LABORATORIES, INCORPORATED (1)
4,210,923 Edge illuminated photodetector with optical fiber alignment 90 1979
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
4,887,140 Clover design lateral effect position-sensitive device 30 1989
 
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY (1)
5,446,751 Optoelectronic device 29 1992
 
CANON KABUSHIKI KAISHA (1)
5,252,142 Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps 47 1991
 
CARSON ALEXIOU CORPORATION (1)
4,290,844 Focal plane photo-detector mosaic array fabrication 34 1979
 
DELPHI TECHNOLOGIES, INC. (1)
6,772,729 Swirl port system for a diesel engine 24 2002
 
EASTMAN KODAK COMPANY (1)
5,408,122 Vertical structure to minimize settling times for solid state light detectors 27 1993
 
FUJITSU LIMITED (1)
5,144,379 Semiconductor device having a group III-V epitaxial semiconductor layer on a substrate 34 1991
 
GENERAL ELECTRIC COMPANY (1)
6,504,158 Imaging array minimizing leakage currents 23 2000
 
IMATION CORP. (1)
5,254,480 Process for producing a large area solid state radiation detector 114 1992
 
INTEVAC, INC. (1)
5,576,559 Heterojunction electron transfer device 26 1994
 
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) (1)
4,874,939 Method and apparatus for detecting position/variance of input light using linear and quadratic outputs 34 1987
 
KABUSHIKI KAISHA TOSHIBA (1)
5,599,389 Compound semiconductor and method of manufacturing the same 26 1994
 
LOCKHEED MARTIN CORPORATION (1)
6,438,296 Fiber optic taper coupled position sensing module 24 2000
 
LUCENT TECHNOLOGIES INC. (1)
6,326,649 Pin photodiode having a wide bandwidth 36 1999
 
MARCONI MEDCICAL SYSTEMS, INC. (1)
6,426,991 Back-illuminated photodiodes for computed tomography detectors 73 2000
 
MARCONI MEDICAL SYSTEMS, INC. (1)
6,510,195 Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same 101 2001
 
MOTOROLA, INC. (1)
5,501,990 High density LED arrays with semiconductor interconnects 28 1995
 
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
5,818,096 Pin photodiode with improved frequency response and saturation output 41 1997
 
OSMIC, INC. (1)
5,923,720 Angle dispersive x-ray spectrometer 70 1997
 
ROCKY MOUNTAIN BIOSYSTEMS, INC. (1)
6,352,517 Optical monitor of anatomical movement and uses thereof 38 1999
 
SAMSUNG ELECTRONICS CO., LTD. (1)
2004/0241,897 Edge-illuminated refracting-facet type light receiving device and method for manufacturing the same 18 2003
 
SANTA BARBARA RESEARCH CENTER (1)
5,049,962 Control of optical crosstalk between adjacent photodetecting regions 29 1990
 
SEMICOA SEMICONDUCTORS (1)
7,112,465 Fabrication methods for ultra thin back-illuminated photodiode array 23 2004
 
SENSORS UNLIMITED, INC. (1)
6,489,635 Epitaxially grown p-type diffusion source for photodiode fabrication 23 2001
 
SHIPLEY COMPANY, L.L.C. (1)
5,053,318 Plasma processing with metal mask integration 73 1989
 
SILICON GRAPHICS INTERNATIONAL, CORP. (1)
5,276,955 Multilayer interconnect system for an area array interconnection using solid state diffusion 45 1992
 
SILICON LABORATORIES INC. (1)
6,027,956 Process for producing planar dielectrically isolated high speed pin photodiode 37 1998
 
SITEK ELECTRO OPTICS AB (1)
5,869,834 Photodetector having an integrated function for elimination of the effects of stray light 25 1997
 
SUNIVA (1)
5,928,438 Structure and fabrication process for self-aligned locally deep-diffused emitter (SALDE) solar cell 55 1996
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
6,326,300 Dual damascene patterned conductor layer formation method 39 1998
 
U.S. PHILIPS CORPORATION (1)
4,904,608 Pin photodiode having a low leakage current 31 1989
 
UDT SENSORS, INC. (1)
7,279,731 Edge illuminated photodiodes 20 2006
 
UNITED MICROELECTRONICS CORP. (1)
6,569,700 Method of reducing leakage current of a photodiode 34 2001
 
UNIVERSAL DISPLAY CORPORATION (1)
5,656,508 Method of making two dimensional organic light emitting diode array for high density information image manifestation apparatus 26 1996
 
WINBOND ELECTRONICS CORP. (1)
6,826,080 Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor 36 2002

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (4)
8,003,425 Methods for forming anti-reflection structures for CMOS image sensors 1 2008
7,897,434 Methods of fabricating solar cell chips 0 2008
8,138,534 Anti-reflection structures for CMOS image sensors 0 2010
8,409,904 Methods for forming anti-reflection structures for CMOS image sensors 0 2011

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