US Patent No: 7,655,999

Number of patents in Portfolio can not be more than 2000

High density photodiodes

ALSO PUBLISHED AS: 20080067622
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Abstract

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The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA34

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, CA 73 496
Taneja, Narayan Dass Long Beach, CA 74 537

Cited Art Landscape

Patent Info (Count) # Cites Year
 
OSI OPTOELECTRONICS, INC. (9)
6,593,636 High speed silicon photodiodes and method of manufacture 37 2000
7,057,254 Front illuminated back side contact thin wafer detectors 34 2004
2008/0128,846 Thin wafer detectors with improved radiation damage and crosstalk characteristics 39 2005
2007/0090,394 Deep diffused thin photodiodes 24 2005
2006/0255,420 Front illuminated back side contact thin wafer detectors 24 2006
2007/0278,534 LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY 21 2006
2008/0067,622 HIGH DENSITY PHOTODIODES 29 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 21 2007
2007/0296,005 Edge Illuminated Photodiodes 21 2007
 
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DIGIRAD CORPORATION (2)
6,670,258 Fabrication of low leakage-current backside illuminated photodiodes 67 2001
6,734,416 Fabrication of low leakage-current backside illuminated photodiodes 56 2002
 
HAMAMATSU PHOTONICS K.K. (2)
* 6,853,046 Photodiode array and method of making the same 11 2003
2006/0278,898 Backside-illuminated photodetector and method for manufacturing same 44 2004
 
NEC CORPORATION (2)
5,825,047 Optical semiconductor device 54 1994
6,546,171 Structure for shielding stray light in optical waveguide module 35 2001
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
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UNIVERSITY OF HAWAII (2)
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KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) (1)
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KABUSHIKI KAISHA TOSHIBA (1)
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LOCKHEED MARTIN CORPORATION (1)
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SAMSUNG ELECTRONICS CO., LTD. (1)
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Semicoa Semiconductors (1)
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SENSORS UNLIMITED, INC. (1)
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Shipley Company, L.L.C. (1)
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SILICON GRAPHICS INTERNATIONAL, CORP. (1)
5,276,955 Multilayer interconnect system for an area array interconnection using solid state diffusion 55 1992
 
SILICON LABORATORIES INC. (1)
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SITEK ELECTRO OPTICS AB (1)
5,869,834 Photodetector having an integrated function for elimination of the effects of stray light 35 1997
 
SUNIVA (1)
5,928,438 Structure and fabrication process for self-aligned locally deep-diffused emitter (SALDE) solar cell 80 1996
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
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U.S. PHILIPS CORPORATION (1)
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UDT SENSORS, INC. (1)
7,279,731 Edge illuminated photodiodes 28 2006
 
UNITED MICROELECTRONICS CORP. (1)
6,569,700 Method of reducing leakage current of a photodiode 43 2001
 
UNIVERSAL DISPLAY CORPORATION (1)
5,656,508 Method of making two dimensional organic light emitting diode array for high density information image manifestation apparatus 38 1996
 
WINBOND ELECTRONICS CORP. (1)
6,826,080 Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor 45 2002
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (6)
* 8,003,425 Methods for forming anti-reflection structures for CMOS image sensors 3 2008
* 7,897,434 Methods of fabricating solar cell chips 0 2008
8,138,534 Anti-reflection structures for CMOS image sensors 1 2010
8,409,904 Methods for forming anti-reflection structures for CMOS image sensors 2 2011
8,716,771 Anti-reflection structures for CMOS image sensors 0 2012
8,742,560 Anti-reflection structures for CMOS image sensors 0 2013
 
OSI OPTOELECTRONICS, INC. (3)
8,816,464 Photodiode and photodiode array with improved performance characteristics 0 2012
8,698,197 Tetra-lateral position sensing detector 0 2013
8,907,440 High speed backside illuminated, front side contact photodiode array 0 2013
 
Other [Check patent profile for assignment information] (1)
8,912,615 Shallow junction photodiode for detecting short wavelength light 0 2013
* Cited By Examiner

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