US Patent No: 7,655,999

Number of patents in Portfolio can not be more than 2000

High density photodiodes

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Abstract

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The present invention is a front-side contact, back-side illuminated (FSC-BSL) photodiode arrays and front-side illuminated, back-side contact (FSL-BSC) photodiode arrays having improved characteristics, including high production throughput, low-cost manufacturing via implementation of batch processing techniques; uniform, as well as high, photocurrent density owing to presence of a large continuous homogeneous, heavily doped layer; and back to front intrachip connections via the homogenous, heavily doped layers on the front and back sides of the substrate.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA36

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, US 46 728
Taneja, Narayan Dass Long Beach, US 46 759

Cited Art Landscape

Patent Info (Count) # Cites Year
 
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4,998,013 Optical encoder with inactive photodetectors 43 1989
 
MARCONI MEDICAL SYSTEMS, INC. (1)
6,510,195 Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same 151 2001
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
6,326,300 Dual damascene patterned conductor layer formation method 50 1998
 
IMATION CORP. (1)
5,254,480 Process for producing a large area solid state radiation detector 126 1992
 
UNIVERSAL DISPLAY CORPORATION (1)
5,656,508 Method of making two dimensional organic light emitting diode array for high density information image manifestation apparatus 42 1996
 
UDT Sensors, Inc. (1)
7,279,731 Edge illuminated photodiodes 32 2006
 
HAMAMATSU PHOTONICS K.K. (2)
* 6,853,046 Photodiode array and method of making the same 17 2003
2006/0278,898 Backside-illuminated photodetector and method for manufacturing same 56 2004
 
SAMSUNG ELECTRONICS CO., LTD. (1)
2004/0241,897 Edge-illuminated refracting-facet type light receiving device and method for manufacturing the same 29 2003
 
INTEVAC, INC. (1)
5,576,559 Heterojunction electron transfer device 39 1994
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
4,887,140 Clover design lateral effect position-sensitive device 43 1989
 
THE UNIVERSITY OF HAWAII (2)
5,237,197 Integrated VLSI radiation/particle detector with biased pin diodes 40 1991
5,889,313 Three-dimensional architecture for solid state radiation detectors 36 1997
 
NEC CORPORATION (2)
5,825,047 Optical semiconductor device 58 1994
6,546,171 Structure for shielding stray light in optical waveguide module 39 2001
 
UNITED MICROELECTRONICS CORP. (1)
6,569,700 Method of reducing leakage current of a photodiode 47 2001
 
Semicoa Semiconductors (1)
7,112,465 Fabrication methods for ultra thin back-illuminated photodiode array 41 2004
 
MARCONI MEDCICAL SYSTEMS, INC. (1)
6,426,991 Back-illuminated photodiodes for computed tomography detectors 97 2000
 
OSMIC, INC. (1)
5,923,720 Angle dispersive x-ray spectrometer 88 1997
 
SITEK ELECTRO OPTICS AB (1)
5,869,834 Photodetector having an integrated function for elimination of the effects of stray light 41 1997
 
KABUSHIKI KAISHA TOSHIBA (1)
5,599,389 Compound semiconductor and method of manufacturing the same 39 1994
 
WINBOND ELECTRONICS CORP. (1)
6,826,080 Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor 49 2002
 
LOCKHEED MARTIN CORPORATION (1)
6,438,296 Fiber optic taper coupled position sensing module 37 2000
 
SUNIVA (1)
5,928,438 Structure and fabrication process for self-aligned locally deep-diffused emitter (SALDE) solar cell 94 1996
 
CANON KABUSHIKI KAISHA (1)
5,252,142 Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps 71 1991
 
GENERAL ELECTRIC COMPANY (1)
6,504,158 Imaging array minimizing leakage currents 36 2000
 
SPECTRAL MD, INC. (1)
6,352,517 Optical monitor of anatomical movement and uses thereof 76 1999
 
LUCENT TECHNOLOGIES INC. (1)
6,326,649 Pin photodiode having a wide bandwidth 73 1999
 
U.S. PHILIPS CORPORATION (1)
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KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) (1)
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SENSORS UNLIMITED, INC. (1)
6,489,635 Epitaxially grown p-type diffusion source for photodiode fabrication 38 2001
 
SILICON GRAPHICS INTERNATIONAL CORP. (1)
5,276,955 Multilayer interconnect system for an area array interconnection using solid state diffusion 60 1992
 
Santa Barbara Research Center (1)
5,049,962 Control of optical crosstalk between adjacent photodetecting regions 39 1990
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
5,214,276 Semiconductor structure for photodetector 45 1991
6,218,684 Photodiode with buffer layer 39 1998
 
FUJITSU LIMITED (1)
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SILICON LABORATORIES INC. (1)
6,027,956 Process for producing planar dielectrically isolated high speed pin photodiode 49 1998
 
MOTOROLA, INC. (1)
5,501,990 High density LED arrays with semiconductor interconnects 42 1995
 
DIGIRAD CORPORATION (2)
6,670,258 Fabrication of low leakage-current backside illuminated photodiodes 72 2001
6,734,416 Fabrication of low leakage-current backside illuminated photodiodes 61 2002
 
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY (1)
5,446,751 Optoelectronic device 42 1992
 
DELPHI TECHNOLOGIES, INC. (1)
6,772,729 Swirl port system for a diesel engine 38 2002
 
OSI OPTOELECTRONICS, INC. (9)
6,593,636 High speed silicon photodiodes and method of manufacture 41 2000
7,057,254 Front illuminated back side contact thin wafer detectors 38 2004
2008/0128,846 Thin wafer detectors with improved radiation damage and crosstalk characteristics 43 2005
2007/0090,394 Deep diffused thin photodiodes 28 2005
2006/0255,420 Front illuminated back side contact thin wafer detectors 28 2006
2007/0278,534 LOW CROSSTALK, FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT PHOTODIODE ARRAY 27 2006
2008/0067,622 HIGH DENSITY PHOTODIODES 35 2006
2008/0277,753 THIN ACTIVE LAYER FISHBONE PHOTODIODE AND METHOD OF MANUFACTURING THE SAME 25 2007
2007/0296,005 Edge Illuminated Photodiodes 25 2007
 
EASTMAN KODAK COMPANY (1)
5,408,122 Vertical structure to minimize settling times for solid state light detectors 40 1993
 
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
5,818,096 Pin photodiode with improved frequency response and saturation output 54 1997
 
AGILENT TECHNOLOGIES, INC. (1)
5,430,321 Photodiode structure 51 1994
 
Shipley Company, L.L.C. (1)
5,053,318 Plasma processing with metal mask integration 84 1989
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (10)
* 8,003,425 Methods for forming anti-reflection structures for CMOS image sensors 4 2008
* 2009/0286,346 Methods For Forming Anti-Reflection Structures For CMOS Image Sensors 16 2008
* 7,897,434 Methods of fabricating solar cell chips 0 2008
* 2010/0037,939 METHODS OF FABRICATING SOLAR CELL CHIPS 7 2008
8,138,534 Anti-reflection structures for CMOS image sensors 2 2010
* 2010/0264,473 ANTI-REFLECTION STRUCTURES FOR CMOS IMAGE SENSORS 9 2010
* 2010/0304,519 METHOD OF FABRICATING SOLAR CELL CHIPS 2 2010
8,409,904 Methods for forming anti-reflection structures for CMOS image sensors 2 2011
8,716,771 Anti-reflection structures for CMOS image sensors 0 2012
8,742,560 Anti-reflection structures for CMOS image sensors 0 2013
 
OSI OPTOELECTRONICS, INC. (9)
* 9,178,092 Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays 0 2012
* 2014/0093,994 FRONT-SIDE ILLUMINATED, BACK-SIDE CONTACT DOUBLE-SIDED PN-JUNCTION PHOTODIODE ARRAYS 4 2012
8,816,464 Photodiode and photodiode array with improved performance characteristics 0 2012
8,912,615 Shallow junction photodiode for detecting short wavelength light 0 2013
8,698,197 Tetra-lateral position sensing detector 1 2013
8,907,440 High speed backside illuminated, front side contact photodiode array 0 2013
9,214,588 Wavelength sensitive sensor photodiodes 0 2014
9,147,777 Tetra-lateral position sensing detector 0 2014
9,035,412 Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same 0 2014
 
EXCELITAS CANADA, INC. (1)
* 2008/0012,087 Bonded wafer avalanche photodiode and method for manufacturing same 1 2007
* Cited By Examiner

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