Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
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United States of America Patent
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Feb 2, 2010
Grant Date -
May 1, 2008
app pub date -
Nov 1, 2006
filing date -
Nov 1, 2006
priority date (Note) -
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Abstract
The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array having PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias.
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