Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon
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United States of America Patent
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Feb 2, 2010
Grant Date -
Oct 13, 2005
app pub date -
Apr 7, 2005
filing date -
Apr 8, 2004
priority date (Note) -
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Abstract
The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.
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