Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth
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United States of America Patent
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Feb 2, 2010
Grant Date -
May 21, 2009
app pub date -
Jan 25, 2009
filing date -
Aug 22, 2005
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Abstract
The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
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