Memory cell having a side electrode contact
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United States of America Patent
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Feb 16, 2010
Grant Date -
Jul 31, 2008
app pub date -
Sep 28, 2007
filing date -
Jan 31, 2007
priority date (Note) -
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Abstract
Memory cells are described along with methods for manufacturing. A memory cell as described herein includes a bottom electrode, a memory element and a side electrode. The bottom electrode contacts the memory element at a first contact surface on the bottom of the memory element. The side electrode contacts the memory element at a second contact surface on the side of the memory element, where the second contact surface on the side faces laterally relative to the first contact surface on the bottom.
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