Phase change memory cell and method of formation
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United States of America Patent
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Feb 16, 2010
Grant Date -
Jun 19, 2008
app pub date -
Dec 21, 2007
filing date -
Aug 2, 2005
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Abstract
A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second electrode is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements.
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