Plasma-enhanced pulsed deposition of metal carbide films

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United States of America Patent

PATENT NO 7666474
APP PUB NO 20090280267A1
SERIAL NO

12116894

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Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.

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Patent Owner(s)

Patent OwnerAddress
ASM IP HOLDING B VALMERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Dong Phoenix, US 584 9113
Marcus, Steven Tempe, US 34 2403
Milligan, Brennan Gold Canyon, US 5 916
Wilk, Glen Scottsdale, US 13 2252

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