US Patent No: 7,666,708

Number of patents in Portfolio can not be more than 2000

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices

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ALSO PUBLISHED AS: 20070032023
ATTORNEY / AGENT: (SPONSORED)
 

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Abstract

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
PRESIDENT AND FELLOWS OF HARVARD COLLEGECAMBRIDGE, MA1082

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cui, Yi Sunnyvale, CA 78 729
Duan, Xiangfeng Mountain View, CA 76 1262
Huang, Yu Princeton, NJ 125 725
Lieber, Charles M Lexington, MA 88 2679

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Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
CALIFORNIA INSTITUTE OF TECHNOLOGY (2)
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