Semiconductor device and method of forming double-sided through vias in saw streets
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United States of America Patent
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Feb 23, 2010
Grant Date -
Dec 3, 2009
app pub date -
May 27, 2008
filing date -
May 27, 2008
priority date (Note) -
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Abstract
A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.
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