Semiconductor device having a laterally modulated gate workfunction and method of fabrication
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 23, 2010
Grant Date -
Oct 6, 2005
app pub date -
Apr 4, 2005
filing date -
Mar 31, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A transistor comprising a gate electrode formed on a gate dielectric layer formed on a substrate. A pair of source/drain regions are formed in the substrate on opposite sides of the laterally opposite sidewalls of the gate electrode. The gate electrode has a central portion formed on the gate dielectric layer and over the substrate region between the source and drain regions and a pair sidewall portions which overlap a portion of the source/drain regions wherein the central portion has a first work function and said pair of sidewall portions has a second work function, wherein the second work function is different than the first work function.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully