Treatment for reduction of line edge roughness
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United States of America Patent
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Mar 2, 2010
Issued Date -
N/A
app pub date -
Mar 6, 2006
filing date -
Mar 6, 2006
priority date (Note) -
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Abstract
A method for reducing line edge roughness (LER) in a layer of photoresist is provided. In accordance with the method, a layer of photoresist is applied to a substrate. The layer of photoresist is then patterned and annealed in an atmosphere comprising at least one gas selected from the group consisting of hydrogen, nitrogen and fluorine-containing materials. Preferably, the anneal is performed after patterning the photoresist, but either immediately after, or subsequent to, the trim.
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