Integrated capacitors in package-level structures, processes of making same, and systems containing same
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United States of America Patent
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Mar 2, 2010
Grant Date -
Jul 12, 2007
app pub date -
Dec 30, 2005
filing date -
Dec 30, 2005
priority date (Note) -
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Abstract
An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
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