Methods and apparatus for forming a polysilicon capacitor
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United States of America Patent
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Mar 2, 2010
Grant Date -
Oct 9, 2008
app pub date -
Apr 9, 2007
filing date -
Apr 9, 2007
priority date (Note) -
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Abstract
An embodiment relates generally to a method of forming a capacitor. The method includes depositing a first layer of polysilicon on a substrate and implanting a high dose of implant into the first layer of polysilicon. The method also includes depositing a layer of dielectric over the first layer of polysilicon and depositing a second layer of polysilicon over the layer of dielectric. The method further includes implanting an equivalent concentration of implant in both the first layer of polysilicon into the second layer of polysilicon.
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