Methods to eliminate contact plug sidewall slit
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United States of America Patent
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Mar 2, 2010
Grant Date -
Nov 15, 2007
app pub date -
May 15, 2006
filing date -
May 15, 2006
priority date (Note) -
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Abstract
A method to form a barrier layer and contact plug using a touch up RIE. In a first embodiment, we form a first barrier layer over the dielectric layer and the substrate in the contact hole. The first barrier layer is comprised of Ta. A second barrier layer is formed over the first barrier layer. The second barrier layer is comprised of TaN or WN. We planarize a first conductive layer to form a first contact plug in the contact hole. We reactive ion etch (e.g., W touch up etch) the top surfaces using a Cl and B containing etch. Because of the composition of the barrier layers and RIE etch chemistry, the barrier layers are not significantly etched selectively to the dielectric layer. In a second embodiment, a barrier film is comprised of WN.
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