Semiconductor device for providing capacitive semiconductor sensor and method for manufacturing capacitive semiconductor sensor

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United States of America Patent

PATENT NO 7678589
APP PUB NO 20070289384A1
SERIAL NO

11723428

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Abstract

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A method for manufacturing a capacitive semiconductor sensor includes: forming a plurality of circuit chips in a wafer, wherein each circuit chip includes a pad for testing a sensor chip; bonding the sensor chip on each circuit chip with a bump so that the sensor chip is electrically coupled with the circuit chip, wherein each sensor chip is made of semiconductor and has a capacitance changing portion, which is disposed on one side of the sensor chip and has a variable capacitance, wherein the circuit chip detects a capacitance change of the sensor chip, and wherein the one side of the sensor chip faces the circuit chip; testing each sensor chip through the pad; and cutting the wafer into individual circuit chips so that the circuit chip and the sensor chip provide the capacitive semiconductor sensor.

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Patent Owner(s)

Patent OwnerAddress
DENSO CORPORATION1-1 SHOWA-CHO KARIYA-CITY AICHI-PREF 448-8661

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oota, Tameharu Takahama, JP 1 36
Sakai, Minekazu Kariya, JP 85 1468

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