Phase change memory device and fabrication method thereof
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United States of America Patent
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Mar 16, 2010
Grant Date -
Mar 5, 2009
app pub date -
Sep 4, 2007
filing date -
Sep 4, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A phase change memory device is disclosed. A second conductive spacer is under a first conductive spacer. A phase change layer comprises a first portion substantially parallel to the first and second conductive spacers and a second portion on top of the second conductive spacer, wherein the second conductive spacer is electrically connected to the first conductive spacer through the second portion of the phase change layer.
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