Method for forming metal interconnection in image sensor
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United States of America Patent
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Mar 16, 2010
Grant Date -
Jul 5, 2007
app pub date -
Dec 20, 2006
filing date -
Dec 29, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming a metal interconnection in an image sensor includes forming a first interlayer dielectric (ILD) layer having a contact plug over a substrate, forming a diffusion barrier layer over the first ILD layer, performing a forming gas annealing, forming a second ILD layer over the diffusion barrier layer, etching the second ILD layer and the diffusion barrier layer to form a trench, forming a conductive layer to fill the trench, and planarizing the conductive layer to form a metal interconnection electrically connected to the contact plug.
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