Method for making a keyhole opening during the manufacture of a memory cell

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United States of America Patent

PATENT NO 7682868
APP PUB NO 20080138930A1
SERIAL NO

11567314

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Abstract

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A keyhole opening is formed during one example of manufacturing a memory cell. An upper layer is formed on a base layer, the base layer having a bottom electrode. The upper layer includes a second layer formed over the base layer and a first layer formed over the second layer. A keyhole opening is formed through the upper layer to expose a surface of the bottom electrode and to create a first memory cell subassembly. The keyhole opening comprises a first, upper opening segment formed within the first layer and a second opening segment formed within the second layer, the first and second opening segments having first and second widths. The first layer has an overhanging portion extending into the opening so that the first width is shorter than the second width.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang-Lan Elmsford, US 320 9851

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