Method of treating a substrate, method of processing a substrate using a laser beam, and arrangement
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United States of America Patent
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Mar 23, 2010
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app pub date -
Nov 25, 2005
filing date -
Nov 25, 2005
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Abstract
A method and arrangement for treating a substrate processed using a laser beam, wherein said substrate comprises at least a body of semiconductor material. The method comprises a step of etching said substrate for removing from said body of semiconductor material recast material deposited on said body during said laser processing. The step of etching is controlled for removing in addition to said recast layer, at least a part of said semiconductor material of said body for improving mechanical strength of said substrate.
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