Dielectric layers and memory cells including metal-doped alumina
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United States of America Patent
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Mar 23, 2010
Grant Date -
Apr 30, 2009
app pub date -
Dec 29, 2008
filing date -
Aug 28, 2002
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Abstract
A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.
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