Horizontal chalcogenide element defined by a pad for use in solid-state memories
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United States of America Patent
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Mar 23, 2010
Grant Date -
Jul 20, 2006
app pub date -
Mar 17, 2006
filing date -
Jan 6, 2004
priority date (Note) -
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Abstract
A memory cell structure includes a substrate having a bottom electrode at least partially disposed within the substrate; a pad disposed at least partially over the substrate; a phase change element having a chalcogenide material, disposed at least partially over the substrate and adjacent to the pad, the phase change element being adjacent and operatively coupled to the bottom electrode; and a top electrode operatively coupled to the phase change element. Moreover, the pad is formed by a method including depositing a first material layer over the substrate, etching the first material layer to form a pad strip and to expose the bottom electrode, and etching the pad strip to from the pad.
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