US Patent No: 7,687,307

Number of patents in Portfolio can not be more than 2000

Vacuum jacketed electrode for phase change memory element

ALSO PUBLISHED AS: 20090098678

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Abstract

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A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2200

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Elmsford, NY 152 4887

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (35)
6,177,317 Method of making nonvolatile memory devices having reduced resistance diffusion regions 213 1999
6,271,090 Method for manufacturing flash memory device with dual floating gates and two bits per cell 209 2000
6,320,786 Method of controlling multi-state NROM 298 2001
6,487,114 Method of reading two-bit memories of NROM cell 247 2001
6,579,760 Self-aligned, programmable phase change memory 269 2002
6,864,503 Spacer chalcogenide memory method and device 213 2002
6,850,432 Laser programmable electrically readable phase-change memory method and device 171 2002
7,067,865 High density chalcogenide memory cells 169 2003
6,830,952 Spacer chalcogenide memory method and device 110 2003
7,033,856 Spacer chalcogenide memory method 151 2004
7,220,983 Self-aligned small contact phase-change memory method and device 181 2004
2006/0286,709 Manufacturing methods for thin film fuse phase change ram 174 2005
2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 165 2005
2006/0110,878 Side wall active pin memory and manufacturing method 194 2005
2007/0111,429 Method of manufacturing a pipe shaped phase change memory 157 2006
2007/0115,794 Thermal isolation for an active-sidewall phase change memory cell 155 2006
2007/0108,431 I-shaped phase change memory cell 160 2006
2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 152 2006
2007/0117,315 Memory cell device and manufacturing method 166 2006
2007/0154,847 Chalcogenide layer etching method 155 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 158 2006
2007/0158,862 Vacuum jacketed electrode for phase change memory element 153 2006
2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 153 2006
2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 164 2006
2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 158 2006
2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method 151 2006
2007/0173,019 Programmable Resistive Ram and Manufacturing Method 180 2006
2007/0161,186 Programmable Resistive RAM and Manufacturing Method 160 2006
2007/0158,690 Programmable Resistive RAM and Manufacturing Method 160 2006
2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 155 2006
2007/0158,633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array 156 2006
2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 156 2006
2007/0147,105 Phase Change Memory Cell and Manufacturing Method 150 2006
2007/0109,843 Phase Change Memory Device and Manufacturing Method 153 2007
2007/0138,458 Damascene Phase Change RAM and Manufacturing Method 154 2007
 
ROUND ROCK RESEARCH, LLC (29)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 344 1995
5,869,843 Memory array having a multi-state element and method for forming such array or cells thereof 369 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 266 1995
6,420,725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 364 1995
6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 217 1996
5,789,277 Method of making chalogenide memory device 469 1996
5,814,527 Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories 388 1996
5,831,276 Three-dimensional container diode for use with multi-state material in a non-volatile memory cell 251 1996
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 290 1996
6,147,395 Method for fabricating a small area of contact between electrodes 245 1996
6,117,720 Method of making an integrated circuit electrode having a reduced contact area 423 1997
5,985,698 Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell 203 1997
6,236,059 Memory cell incorporating a chalcogenide element and method of making same 407 1997
5,952,671 Small electrode for a chalcogenide switching device and method for fabricating same 254 1997
6,031,287 Contact structure and memory element incorporating the same 447 1997
6,150,253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 252 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 271 1997
6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 255 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 474 1997
6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 408 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 208 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 238 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 239 1999
6,153,890 Memory cell incorporating a chalcogenide element 252 1999
6,287,887 Method for fabricating a small area of contact between electrodes 205 2000
6,462,353 Method for fabricating a small area of contact between electrodes 206 2000
6,563,156 Memory elements and methods for making same 199 2001
6,423,621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 214 2001
6,607,974 Method of forming a contact structure in a semiconductor device 204 2001
 
OVONYX, INC. (19)
5,166,758 Electrically erasable phase change memory 574 1991
5,177,567 Thin-film structure for chalcogenide electrical switching devices and process therefor 528 1991
5,534,712 Electrically erasable memory elements characterized by reduced current and improved thermal stability 439 1995
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 527 1998
RE37259 Multibit single cell memory element having tapered contact 435 1999
6,314,014 Programmable resistance memory arrays with reference cells 298 1999
6,339,544 Method to enhance performance of thermal resistor device 398 2000
6,567,293 Single level metal memory cell using chalcogenide cladding 371 2000
6,617,192 Electrically programmable memory element with multi-regioned contact 224 2000
6,534,781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact 373 2000
6,514,788 Method for manufacturing contacts for a Chalcogenide memory device 204 2001
6,511,867 Utilizing atomic layer deposition for programmable device 370 2001
6,673,700 Reduced area intersection between electrode and programming element 359 2001
6,566,700 Carbon-containing interfacial layer for phase-change memory 393 2001
6,800,563 Forming tapered lower electrode phase-change memories 166 2001
6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 375 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 183 2004
6,933,516 Forming tapered lower electrode phase-change memories 195 2004
7,023,009 Electrically programmable memory element with improved contacts 160 2004
 
INTEL CORPORATION (10)
6,501,111 Three-dimensional (3D) programmable device 394 2000
6,429,064 Reduced contact area of sidewall conductor 372 2000
6,555,860 Compositionally modified resistive electrode 351 2001
6,512,241 Phase change material memory device 392 2001
6,597,009 Reduced contact area of sidewall conductor 367 2002
6,998,289 Multiple layer phase-change memory 45 2002
6,744,088 Phase change memory device on a planar composite layer 235 2002
6,791,102 Phase change memory 234 2002
6,797,979 Metal structure for a phase-change memory device 203 2003
2005/0029,502 Processing phase change material to improve programming speed 188 2003
 
MICRON TECHNOLOGY, INC. (6)
5,837,564 Method for optimal crystallization to obtain high electrical performance from chalcogenides 250 1995
6,605,527 Reduced area intersection between electrode and programming element 366 2001
6,586,761 Phase change material memory device 402 2001
6,861,267 Reducing shunts in memories with phase-change material 195 2001
6,864,500 Programmable conductor memory cell structure 204 2002
6,800,504 Integrated circuit device and fabrication using metal-doped chalcogenide materials 171 2002
 
SANDISK 3D LLC (6)
6,185,122 Vertically stacked field programmable nonvolatile memory and method of fabrication 497 1999
6,351,406 Vertically stacked field programmable nonvolatile memory and method of fabrication 267 2000
6,627,530 Patterning three dimensional structures 229 2000
6,420,215 Three-dimensional memory array and method of fabrication 523 2001
6,888,750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 266 2001
6,483,736 Vertically stacked field programmable nonvolatile memory and method of fabrication 272 2001
 
SAMSUNG ELECTRONICS CO., LTD. (5)
6,621,095 Method to enhance performance of thermal resistor device 373 2001
6,894,305 Phase-change memory devices with a self-heater structure 219 2004
7,042,001 Phase change memory devices including memory elements having variable cross-sectional areas 182 2004
2005/0215,009 Methods of forming phase-change memory devices 193 2005
2006/0118,913 Phase changeable memory cells and methods of forming the same 153 2005
 
SILICON STORAGE TECHNOLOGY, INC. (4)
6,867,638 High voltage generation and regulation system for digital multilevel nonvolatile memory 194 2002
6,815,704 Phase change memory device employing thermally insulating voids 235 2003
6,927,410 Memory device with discrete layers of phase change memory material 216 2003
6,937,507 Memory device and method of operating same 229 2003
 
ENERGY CONVERSION DEVICES, INC. (3)
4,599,705 Programmable cell for use in programmable electronic arrays 330 1984
4,719,594 Grooved optical data storage device including a chalcogenide memory layer 245 1985
5,687,112 Multibit single cell memory element having tapered contact 490 1996
 
QIMONDA AG (3)
6,420,216 Fuse processing using dielectric planarization pillars 201 2000
7,166,533 Phase change memory cell defined by a pattern shrink material process 175 2005
7,214,958 Phase change memory cell with high read margin at low power operation 183 2005
 
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (2)
6,589,714 Method for making programmable resistance memory element using silylated photoresist 367 2001
6,613,604 Method for making small pore for use in programmable resistance memory element 381 2001
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5,166,096 Process for fabricating self-aligned contact studs for semiconductor structures 302 1992
6,936,840 Phase-change memory cell and method of fabricating the phase-change memory cell 202 2004
 
SAIFUN SEMICONDUCTORS LTD. (2)
6,011,725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 993 1999
6,992,932 Method circuit and system for read error detection in a non-volatile memory array 285 2003
 
ACTEL CORPORATION (1)
4,876,220 Method of making programmable low impedance interconnect diode element 417 1987
 
AGILENT TECHNOLOGIES, INC. (1)
6,077,674 Method of producing oligonucleotide arrays with features of high purity 182 1999
 
DAI NIPPON PRINTING CO., LTD. (1)
6,859,389 Phase change-type memory element and process for producing the same 178 2003
 
GOOGLE INC. (1)
5,515,488 Method and apparatus for concurrent graphical visualization of a database search and its search history 289 1994
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
6,605,821 Phase change material electronic memory structure and method for forming 215 2002
 
INFINEON TECHNOLOGIES AG (1)
2005/0212,024 Memory device with an active material embedded in an insulating material 155 2005
 
KABUSHIKI KAISHA TOSHIBA (1)
4,959,812 Electrically erasable programmable read-only memory with NAND cell structure 306 1988
 
LEIDOS, INC. (1)
6,903,362 Phase change switches and circuits coupling to electromagnetic waves containing phase change switches 157 2004
 
RENESAS TECHNOLOGY CORP. (1)
7,126,149 Phase change memory and phase change recording medium 139 2004
 
RHOMBUS, INC. (1)
6,034,882 Vertically stacked field programmable nonvolatile memory and method of fabrication 850 1998
 
RICOH COMPANY, LTD. (1)
6,280,684 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 209 2000
 
SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 261 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 226 2001
 
The Procter & Gamble Company (1)
7,132,675 Programmable conductor memory cell structure and method therefor 166 2004
 
YEDA RESEARCH AND DEVELOPMENT CO. LTD. (1)
5,958,358 Oriented polycrystalline thin films of transition metal chalcogenides 174 1996

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