Vacuum jacketed electrode for phase change memory element

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7687307
APP PUB NO 20090098678A1
SERIAL NO

12335801

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2787

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Dobbs Ferry, US 118 6317

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SILICON STORAGE TECHNOLOGY, INC. (4)
6867638 High voltage generation and regulation system for digital multilevel nonvolatile memory 205 2002
6815704 Phase change memory device employing thermally insulating voids 267 2003
6927410 Memory device with discrete layers of phase change memory material 229 2003
6937507 Memory device and method of operating same 245 2003
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
6639849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 280 2003
 
MICRON TECHNOLOGY, INC. (5)
5837564 Method for optimal crystallization to obtain high electrical performance from chalcogenides 263 1995
6605527 Reduced area intersection between electrode and programming element 380 2001
6586761 Phase change material memory device 423 2001
6861267 Reducing shunts in memories with phase-change material 206 2001
6800504 Integrated circuit device and fabrication using metal-doped chalcogenide materials 186 2002
 
SAMSUNG ELECTRONICS CO., LTD. (5)
6621095 Method to enhance performance of thermal resistor device 388 2001
6894305 Phase-change memory devices with a self-heater structure 234 2004
7042001 Phase change memory devices including memory elements having variable cross-sectional areas 194 2004
2005/0215,009 Methods of forming phase-change memory devices 206 2005
2006/0118,913 Phase changeable memory cells and methods of forming the same 162 2005
 
DAI NIPPON PRINTING CO., LTD. (1)
6859389 Phase change-type memory element and process for producing the same 187 2003
 
RENESAS TECHNOLOGY CORP. (1)
7126149 Phase change memory and phase change recording medium 146 2004
 
SPANSION ISRAEL LTD (1)
6992932 Method circuit and system for read error detection in a non-volatile memory array 310 2003
 
ACTEL CORPORATION (1)
4876220 Method of making programmable low impedance interconnect diode element 438 1987
 
ENERGY CONVERSION DEVICES, INC. (3)
4599705 Programmable cell for use in programmable electronic arrays 343 1984
4719594 Grooved optical data storage device including a chalcogenide memory layer 257 1985
5687112 Multibit single cell memory element having tapered contact 527 1996
 
KABUSHIKI KAISHA TOSHIBA (1)
4959812 Electrically erasable programmable read-only memory with NAND cell structure 366 1988
 
GOOGLE INC. (1)
5515488 Method and apparatus for concurrent graphical visualization of a database search and its search history 316 1994
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
5166096 Process for fabricating self-aligned contact studs for semiconductor structures 320 1992
 
POLARIS INNOVATIONS LIMITED (1)
7214958 Phase change memory cell with high read margin at low power operation 196 2005
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
6605821 Phase change material electronic memory structure and method for forming 228 2002
 
GLOBALFOUNDRIES INC. (1)
6936840 Phase-change memory cell and method of fabricating the phase-change memory cell 213 2004
 
OVONYX MEMORY TECHNOLOGY, LLC (18)
6087674 Memory element with memory material comprising phase-change material and dielectric material 557 1998
RE37259 Multibit single cell memory element having tapered contact 461 1999
6314014 Programmable resistance memory arrays with reference cells 313 1999
6339544 Method to enhance performance of thermal resistor device 413 2000
6567293 Single level metal memory cell using chalcogenide cladding 386 2000
6617192 Electrically programmable memory element with multi-regioned contact 243 2000
6534781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact 389 2000
6589714 Method for making programmable resistance memory element using silylated photoresist 382 2001
6511867 Utilizing atomic layer deposition for programmable device 385 2001
6673700 Reduced area intersection between electrode and programming element 374 2001
6613604 Method for making small pore for use in programmable resistance memory element 412 2001
6566700 Carbon-containing interfacial layer for phase-change memory 410 2001
6800563 Forming tapered lower electrode phase-change memories 175 2001
6864500 Programmable conductor memory cell structure 222 2002
6593176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 396 2002
6909107 Method for manufacturing sidewall contacts for a chalcogenide memory device 193 2004
6933516 Forming tapered lower electrode phase-change memories 207 2004
7023009 Electrically programmable memory element with improved contacts 171 2004
 
The Procter & Gamble Company (1)
7132675 Programmable conductor memory cell structure and method therefor 176 2004
 
YEDA RESEARCH AND DEVELOPMENT CO. LTD. (1)
5958358 Oriented polycrystalline thin films of transition metal chalcogenides 189 1996
 
RICOH COMPANY, LTD. (1)
6280684 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 220 2000
 
INFINEON TECHNOLOGIES AG (2)
2005/0212,024 Memory device with an active material embedded in an insulating material 164 2005
7166533 Phase change memory cell defined by a pattern shrink material process 193 2005
 
ROUND ROCK RESEARCH, LLC (29)
5789758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 357 1995
5869843 Memory array having a multi-state element and method for forming such array or cells thereof 385 1995
5879955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 279 1995
6420725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 380 1995
6025220 Method of forming a polysilicon diode and devices incorporating such diode 229 1996
5789277 Method of making chalogenide memory device 489 1996
5814527 Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories 404 1996
5831276 Three-dimensional container diode for use with multi-state material in a non-volatile memory cell 272 1996
5998244 Memory cell incorporating a chalcogenide element and method of making same 345 1996
6147395 Method for fabricating a small area of contact between electrodes 264 1996
6117720 Method of making an integrated circuit electrode having a reduced contact area 444 1997
5985698 Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell 219 1997
6236059 Memory cell incorporating a chalcogenide element and method of making same 426 1997
5952671 Small electrode for a chalcogenide switching device and method for fabricating same 270 1997
6031287 Contact structure and memory element incorporating the same 469 1997
6150253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 273 1997
5970336 Method of making memory cell incorporating a chalcogenide element 282 1997
6111264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 267 1997
5920788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 494 1997
6077729 Memory array having a multi-state element and method for forming such array or cellis thereof 423 1999
6104038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 220 1999
6114713 Integrated circuit memory cell having a small active area and method of forming same 250 1999
6189582 Small electrode for a chalcogenide switching device and method for fabricating same 253 1999
6153890 Memory cell incorporating a chalcogenide element 264 1999
6287887 Method for fabricating a small area of contact between electrodes 216 2000
6462353 Method for fabricating a small area of contact between electrodes 219 2000
6563156 Memory elements and methods for making same 210 2001
6423621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 229 2001
6607974 Method of forming a contact structure in a semiconductor device 215 2001
 
QIMONDA AG (1)
6420216 Fuse processing using dielectric planarization pillars 212 2000
 
SANDISK TECHNOLOGIES LLC (6)
6185122 Vertically stacked field programmable nonvolatile memory and method of fabrication 564 1999
6351406 Vertically stacked field programmable nonvolatile memory and method of fabrication 300 2000
6627530 Patterning three dimensional structures 287 2000
6420215 Three-dimensional memory array and method of fabrication 605 2001
6888750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 297 2001
6483736 Vertically stacked field programmable nonvolatile memory and method of fabrication 294 2001
 
MACRONIX INTERNATIONAL CO., LTD. (35)
6177317 Method of making nonvolatile memory devices having reduced resistance diffusion regions 225 1999
6271090 Method for manufacturing flash memory device with dual floating gates and two bits per cell 220 2000
6320786 Method of controlling multi-state NROM 311 2001
6487114 Method of reading two-bit memories of NROM cell 260 2001
6579760 Self-aligned, programmable phase change memory 296 2002
6864503 Spacer chalcogenide memory method and device 229 2002
6850432 Laser programmable electrically readable phase-change memory method and device 180 2002
7067865 High density chalcogenide memory cells 183 2003
6830952 Spacer chalcogenide memory method and device 113 2003
7033856 Spacer chalcogenide memory method 161 2004
7220983 Self-aligned small contact phase-change memory method and device 201 2004
2006/0286,709 Manufacturing methods for thin film fuse phase change ram 219 2005
2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 180 2005
2006/0110,878 Side wall active pin memory and manufacturing method 242 2005
2007/0111,429 Method of manufacturing a pipe shaped phase change memory 174 2006
2007/0115,794 Thermal isolation for an active-sidewall phase change memory cell 164 2006
2007/0108,431 I-shaped phase change memory cell 183 2006
2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 162 2006
2007/0117,315 Memory cell device and manufacturing method 182 2006
2007/0154,847 Chalcogenide layer etching method 165 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 167 2006
2007/0158,862 Vacuum jacketed electrode for phase change memory element 162 2006
2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 164 2006
2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 177 2006
2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 178 2006
2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method 162 2006
2007/0173,019 Programmable Resistive Ram and Manufacturing Method 212 2006
2007/0161,186 Programmable Resistive RAM and Manufacturing Method 174 2006
2007/0158,690 Programmable Resistive RAM and Manufacturing Method 169 2006
2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 166 2006
2007/0158,633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array 172 2006
2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 170 2006
2007/0147,105 Phase Change Memory Cell and Manufacturing Method 159 2006
2007/0109,843 Phase Change Memory Device and Manufacturing Method 162 2007
2007/0138,458 Damascene Phase Change RAM and Manufacturing Method 164 2007
 
INTEL CORPORATION (10)
6501111 Three-dimensional (3D) programmable device 416 2000
6429064 Reduced contact area of sidewall conductor 389 2000
6555860 Compositionally modified resistive electrode 368 2001
6512241 Phase change material memory device 410 2001
6597009 Reduced contact area of sidewall conductor 384 2002
* 6998289 Multiple layer phase-change memory 54 2002
6744088 Phase change memory device on a planar composite layer 249 2002
6791102 Phase change memory 250 2002
6797979 Metal structure for a phase-change memory device 214 2003
2005/0029,502 Processing phase change material to improve programming speed 212 2003
 
LEIDOS, INC. (1)
6903362 Phase change switches and circuits coupling to electromagnetic waves containing phase change switches 167 2004
 
TEXAS INSTRUMENTS INCORPORATED (1)
6545903 Self-aligned resistive plugs for forming memory cell with phase change material 237 2001
 
AGILENT TECHNOLOGIES, INC. (1)
6077674 Method of producing oligonucleotide arrays with features of high purity 215 1999
 
SAIFUN SEMICONDUCTORS LTD. (1)
6011725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 1177 1999
 
OVONYX, INC. (4)
5166758 Electrically erasable phase change memory 612 1991
5177567 Thin-film structure for chalcogenide electrical switching devices and process therefor 544 1991
5534712 Electrically erasable memory elements characterized by reduced current and improved thermal stability 455 1995
6514788 Method for manufacturing contacts for a Chalcogenide memory device 216 2001
 
RHOMBUS, INC. (1)
6034882 Vertically stacked field programmable nonvolatile memory and method of fabrication 1021 1998
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
SAMSUNG ELECTRONICS CO., LTD. (1)
9029828 Phase-change memory devices including thermally-isolated phase-change layers and methods of fabricating the same 0 2013
* Cited By Examiner

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