US Patent No: 7,687,307

Number of patents in Portfolio can not be more than 2000

Vacuum jacketed electrode for phase change memory element

ALSO PUBLISHED AS: 20090098678

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Abstract

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A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2159

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Elmsford, NY 152 4752

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (35)
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7,033,856 Spacer chalcogenide memory method 149 2004
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2006/0286,709 Manufacturing methods for thin film fuse phase change ram 171 2005
2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 163 2005
2006/0110,878 Side wall active pin memory and manufacturing method 189 2005
2007/0111,429 Method of manufacturing a pipe shaped phase change memory 155 2006
2007/0115,794 Thermal isolation for an active-sidewall phase change memory cell 153 2006
2007/0108,431 I-shaped phase change memory cell 158 2006
2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 150 2006
2007/0117,315 Memory cell device and manufacturing method 163 2006
2007/0154,847 Chalcogenide layer etching method 153 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 156 2006
2007/0158,862 Vacuum jacketed electrode for phase change memory element 151 2006
2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 151 2006
2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 162 2006
2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 156 2006
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2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 153 2006
2007/0158,633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array 154 2006
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6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 405 1999
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OVONYX, INC. (19)
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6,566,700 Carbon-containing interfacial layer for phase-change memory 390 2001
6,800,563 Forming tapered lower electrode phase-change memories 164 2001
6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 372 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 181 2004
6,933,516 Forming tapered lower electrode phase-change memories 193 2004
7,023,009 Electrically programmable memory element with improved contacts 158 2004
 
INTEL CORPORATION (10)
6,501,111 Three-dimensional (3D) programmable device 392 2000
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6,555,860 Compositionally modified resistive electrode 348 2001
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6,998,289 Multiple layer phase-change memory 42 2002
6,744,088 Phase change memory device on a planar composite layer 231 2002
6,791,102 Phase change memory 230 2002
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MICRON TECHNOLOGY, INC. (6)
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6,864,500 Programmable conductor memory cell structure 202 2002
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SANDISK 3D LLC (6)
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6,420,215 Three-dimensional memory array and method of fabrication 516 2001
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SAMSUNG ELECTRONICS CO., LTD. (5)
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ENERGY CONVERSION DEVICES, INC. (3)
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QIMONDA AG (3)
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HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
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INFINEON TECHNOLOGIES AG (1)
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RICOH COMPANY, LTD. (1)
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SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 258 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 224 2001
 
The Procter & Gamble Company (1)
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