US Patent No: 7,687,307

Number of patents in Portfolio can not be more than 2000

Vacuum jacketed electrode for phase change memory element

ALSO PUBLISHED AS: 20090098678

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Abstract

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A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2215

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Elmsford, NY 152 4960

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (35)
6,177,317 Method of making nonvolatile memory devices having reduced resistance diffusion regions 215 1999
6,271,090 Method for manufacturing flash memory device with dual floating gates and two bits per cell 211 2000
6,320,786 Method of controlling multi-state NROM 300 2001
6,487,114 Method of reading two-bit memories of NROM cell 249 2001
6,579,760 Self-aligned, programmable phase change memory 274 2002
6,864,503 Spacer chalcogenide memory method and device 216 2002
6,850,432 Laser programmable electrically readable phase-change memory method and device 172 2002
7,067,865 High density chalcogenide memory cells 170 2003
6,830,952 Spacer chalcogenide memory method and device 110 2003
7,033,856 Spacer chalcogenide memory method 152 2004
7,220,983 Self-aligned small contact phase-change memory method and device 183 2004
2006/0286,709 Manufacturing methods for thin film fuse phase change ram 176 2005
2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 167 2005
2006/0110,878 Side wall active pin memory and manufacturing method 197 2005
2007/0111,429 Method of manufacturing a pipe shaped phase change memory 158 2006
2007/0115,794 Thermal isolation for an active-sidewall phase change memory cell 156 2006
2007/0108,431 I-shaped phase change memory cell 161 2006
2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 153 2006
2007/0117,315 Memory cell device and manufacturing method 169 2006
2007/0154,847 Chalcogenide layer etching method 156 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 159 2006
2007/0158,862 Vacuum jacketed electrode for phase change memory element 154 2006
2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 154 2006
2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 165 2006
2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 160 2006
2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method 152 2006
2007/0173,019 Programmable Resistive Ram and Manufacturing Method 182 2006
2007/0161,186 Programmable Resistive RAM and Manufacturing Method 161 2006
2007/0158,690 Programmable Resistive RAM and Manufacturing Method 161 2006
2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 156 2006
2007/0158,633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array 157 2006
2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 158 2006
2007/0147,105 Phase Change Memory Cell and Manufacturing Method 151 2006
2007/0109,843 Phase Change Memory Device and Manufacturing Method 154 2007
2007/0138,458 Damascene Phase Change RAM and Manufacturing Method 155 2007
 
ROUND ROCK RESEARCH, LLC (29)
5,789,758 Chalcogenide memory cell with a plurality of chalcogenide electrodes 346 1995
5,869,843 Memory array having a multi-state element and method for forming such array or cells thereof 373 1995
5,879,955 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 268 1995
6,420,725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 368 1995
6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 219 1996
5,789,277 Method of making chalogenide memory device 472 1996
5,814,527 Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories 391 1996
5,831,276 Three-dimensional container diode for use with multi-state material in a non-volatile memory cell 253 1996
5,998,244 Memory cell incorporating a chalcogenide element and method of making same 295 1996
6,147,395 Method for fabricating a small area of contact between electrodes 247 1996
6,117,720 Method of making an integrated circuit electrode having a reduced contact area 427 1997
5,985,698 Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell 205 1997
6,236,059 Memory cell incorporating a chalcogenide element and method of making same 410 1997
5,952,671 Small electrode for a chalcogenide switching device and method for fabricating same 257 1997
6,031,287 Contact structure and memory element incorporating the same 450 1997
6,150,253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 255 1997
5,970,336 Method of making memory cell incorporating a chalcogenide element 273 1997
6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 257 1997
5,920,788 Chalcogenide memory cell with a plurality of chalcogenide electrodes 477 1997
6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 411 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 210 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 240 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 241 1999
6,153,890 Memory cell incorporating a chalcogenide element 254 1999
6,287,887 Method for fabricating a small area of contact between electrodes 207 2000
6,462,353 Method for fabricating a small area of contact between electrodes 208 2000
6,563,156 Memory elements and methods for making same 201 2001
6,423,621 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 217 2001
6,607,974 Method of forming a contact structure in a semiconductor device 206 2001
 
OVONYX, INC. (19)
5,166,758 Electrically erasable phase change memory 578 1991
5,177,567 Thin-film structure for chalcogenide electrical switching devices and process therefor 531 1991
5,534,712 Electrically erasable memory elements characterized by reduced current and improved thermal stability 442 1995
6,087,674 Memory element with memory material comprising phase-change material and dielectric material 530 1998
RE37259 Multibit single cell memory element having tapered contact 440 1999
6,314,014 Programmable resistance memory arrays with reference cells 300 1999
6,339,544 Method to enhance performance of thermal resistor device 401 2000
6,567,293 Single level metal memory cell using chalcogenide cladding 374 2000
6,617,192 Electrically programmable memory element with multi-regioned contact 227 2000
6,534,781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact 376 2000
6,514,788 Method for manufacturing contacts for a Chalcogenide memory device 206 2001
6,511,867 Utilizing atomic layer deposition for programmable device 373 2001
6,673,700 Reduced area intersection between electrode and programming element 362 2001
6,566,700 Carbon-containing interfacial layer for phase-change memory 396 2001
6,800,563 Forming tapered lower electrode phase-change memories 166 2001
6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 378 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 184 2004
6,933,516 Forming tapered lower electrode phase-change memories 197 2004
7,023,009 Electrically programmable memory element with improved contacts 162 2004
 
INTEL CORPORATION (10)
6,501,111 Three-dimensional (3D) programmable device 397 2000
6,429,064 Reduced contact area of sidewall conductor 376 2000
6,555,860 Compositionally modified resistive electrode 354 2001
6,512,241 Phase change material memory device 396 2001
6,597,009 Reduced contact area of sidewall conductor 371 2002
* 6,998,289 Multiple layer phase-change memory 45 2002
6,744,088 Phase change memory device on a planar composite layer 238 2002
6,791,102 Phase change memory 236 2002
6,797,979 Metal structure for a phase-change memory device 205 2003
2005/0029,502 Processing phase change material to improve programming speed 189 2003
 
MICRON TECHNOLOGY, INC. (6)
5,837,564 Method for optimal crystallization to obtain high electrical performance from chalcogenides 252 1995
6,605,527 Reduced area intersection between electrode and programming element 369 2001
6,586,761 Phase change material memory device 405 2001
6,861,267 Reducing shunts in memories with phase-change material 197 2001
6,864,500 Programmable conductor memory cell structure 207 2002
6,800,504 Integrated circuit device and fabrication using metal-doped chalcogenide materials 171 2002
 
SANDISK 3D LLC (6)
6,185,122 Vertically stacked field programmable nonvolatile memory and method of fabrication 504 1999
6,351,406 Vertically stacked field programmable nonvolatile memory and method of fabrication 275 2000
6,627,530 Patterning three dimensional structures 234 2000
6,420,215 Three-dimensional memory array and method of fabrication 537 2001
6,888,750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 268 2001
6,483,736 Vertically stacked field programmable nonvolatile memory and method of fabrication 275 2001
 
SAMSUNG ELECTRONICS CO., LTD. (5)
6,621,095 Method to enhance performance of thermal resistor device 376 2001
6,894,305 Phase-change memory devices with a self-heater structure 221 2004
7,042,001 Phase change memory devices including memory elements having variable cross-sectional areas 183 2004
2005/0215,009 Methods of forming phase-change memory devices 195 2005
2006/0118,913 Phase changeable memory cells and methods of forming the same 154 2005
 
SILICON STORAGE TECHNOLOGY, INC. (4)
6,867,638 High voltage generation and regulation system for digital multilevel nonvolatile memory 196 2002
6,815,704 Phase change memory device employing thermally insulating voids 237 2003
6,927,410 Memory device with discrete layers of phase change memory material 218 2003
6,937,507 Memory device and method of operating same 234 2003
 
ENERGY CONVERSION DEVICES, INC. (3)
4,599,705 Programmable cell for use in programmable electronic arrays 332 1984
4,719,594 Grooved optical data storage device including a chalcogenide memory layer 247 1985
5,687,112 Multibit single cell memory element having tapered contact 494 1996
 
QIMONDA AG (3)
6,420,216 Fuse processing using dielectric planarization pillars 203 2000
7,166,533 Phase change memory cell defined by a pattern shrink material process 177 2005
7,214,958 Phase change memory cell with high read margin at low power operation 185 2005
 
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (2)
6,589,714 Method for making programmable resistance memory element using silylated photoresist 370 2001
6,613,604 Method for making small pore for use in programmable resistance memory element 385 2001
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
5,166,096 Process for fabricating self-aligned contact studs for semiconductor structures 305 1992
6,936,840 Phase-change memory cell and method of fabricating the phase-change memory cell 204 2004
 
SAIFUN SEMICONDUCTORS LTD. (2)
6,011,725 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping 1009 1999
6,992,932 Method circuit and system for read error detection in a non-volatile memory array 287 2003
 
ACTEL CORPORATION (1)
4,876,220 Method of making programmable low impedance interconnect diode element 420 1987
 
AGILENT TECHNOLOGIES, INC. (1)
6,077,674 Method of producing oligonucleotide arrays with features of high purity 183 1999
 
DAI NIPPON PRINTING CO., LTD. (1)
6,859,389 Phase change-type memory element and process for producing the same 179 2003
 
GOOGLE INC. (1)
5,515,488 Method and apparatus for concurrent graphical visualization of a database search and its search history 291 1994
 
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
6,605,821 Phase change material electronic memory structure and method for forming 217 2002
 
INFINEON TECHNOLOGIES AG (1)
2005/0212,024 Memory device with an active material embedded in an insulating material 156 2005
 
KABUSHIKI KAISHA TOSHIBA (1)
4,959,812 Electrically erasable programmable read-only memory with NAND cell structure 307 1988
 
LEIDOS, INC. (1)
6,903,362 Phase change switches and circuits coupling to electromagnetic waves containing phase change switches 158 2004
 
RENESAS TECHNOLOGY CORP. (1)
7,126,149 Phase change memory and phase change recording medium 140 2004
 
RHOMBUS, INC. (1)
6,034,882 Vertically stacked field programmable nonvolatile memory and method of fabrication 864 1998
 
RICOH COMPANY, LTD. (1)
6,280,684 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 211 2000
 
SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 263 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 228 2001
 
The Procter & Gamble Company (1)
7,132,675 Programmable conductor memory cell structure and method therefor 168 2004
 
YEDA RESEARCH AND DEVELOPMENT CO. LTD. (1)
5,958,358 Oriented polycrystalline thin films of transition metal chalcogenides 175 1996
* Cited By Examiner

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