US Patent No: 7,687,307

Number of patents in Portfolio can not be more than 2000

Vacuum jacketed electrode for phase change memory element

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ALSO PUBLISHED AS: 20090098678
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Abstract

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A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2098

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Elmsford, NY 152 4459

Cited Art Landscape

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (35)
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2006/0286,709 Manufacturing methods for thin film fuse phase change ram 162 2005
2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 159 2005
2006/0110,878 Side wall active pin memory and manufacturing method 178 2005
2007/0111,429 Method of manufacturing a pipe shaped phase change memory 152 2006
2007/0115,794 Thermal isolation for an active-sidewall phase change memory cell 149 2006
2007/0108,431 I-shaped phase change memory cell 154 2006
2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 147 2006
2007/0117,315 Memory cell device and manufacturing method 159 2006
2007/0154,847 Chalcogenide layer etching method 150 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 153 2006
2007/0158,862 Vacuum jacketed electrode for phase change memory element 148 2006
2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 147 2006
2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 156 2006
2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 152 2006
2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method 146 2006
2007/0173,019 Programmable Resistive Ram and Manufacturing Method 166 2006
2007/0161,186 Programmable Resistive RAM and Manufacturing Method 153 2006
2007/0158,690 Programmable Resistive RAM and Manufacturing Method 155 2006
2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 148 2006
2007/0158,633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array 151 2006
2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 151 2006
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ROUND ROCK RESEARCH, LLC (29)
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6,025,220 Method of forming a polysilicon diode and devices incorporating such diode 211 1996
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6,147,395 Method for fabricating a small area of contact between electrodes 240 1996
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5,970,336 Method of making memory cell incorporating a chalcogenide element 265 1997
6,111,264 Small pores defined by a disposable internal spacer for use in chalcogenide memories 248 1997
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6,077,729 Memory array having a multi-state element and method for forming such array or cellis thereof 401 1999
6,104,038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 203 1999
6,114,713 Integrated circuit memory cell having a small active area and method of forming same 231 1999
6,189,582 Small electrode for a chalcogenide switching device and method for fabricating same 234 1999
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6,287,887 Method for fabricating a small area of contact between electrodes 200 2000
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OVONYX, INC. (19)
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6,087,674 Memory element with memory material comprising phase-change material and dielectric material 513 1998
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6,314,014 Programmable resistance memory arrays with reference cells 292 1999
6,339,544 Method to enhance performance of thermal resistor device 392 2000
6,567,293 Single level metal memory cell using chalcogenide cladding 366 2000
6,617,192 Electrically programmable memory element with multi-regioned contact 218 2000
6,534,781 Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact 368 2000
6,514,788 Method for manufacturing contacts for a Chalcogenide memory device 199 2001
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6,673,700 Reduced area intersection between electrode and programming element 354 2001
6,566,700 Carbon-containing interfacial layer for phase-change memory 386 2001
6,800,563 Forming tapered lower electrode phase-change memories 160 2001
6,593,176 METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT 368 2002
6,909,107 Method for manufacturing sidewall contacts for a chalcogenide memory device 178 2004
6,933,516 Forming tapered lower electrode phase-change memories 190 2004
7,023,009 Electrically programmable memory element with improved contacts 155 2004
 
INTEL CORPORATION (10)
6,501,111 Three-dimensional (3D) programmable device 386 2000
6,429,064 Reduced contact area of sidewall conductor 365 2000
6,555,860 Compositionally modified resistive electrode 345 2001
6,512,241 Phase change material memory device 386 2001
6,597,009 Reduced contact area of sidewall conductor 362 2002
6,998,289 Multiple layer phase-change memory 38 2002
6,744,088 Phase change memory device on a planar composite layer 227 2002
6,791,102 Phase change memory 227 2002
6,797,979 Metal structure for a phase-change memory device 198 2003
2005/0029,502 Processing phase change material to improve programming speed 178 2003
 
MICRON TECHNOLOGY, INC. (6)
5,837,564 Method for optimal crystallization to obtain high electrical performance from chalcogenides 245 1995
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6,864,500 Programmable conductor memory cell structure 198 2002
6,800,504 Integrated circuit device and fabrication using metal-doped chalcogenide materials 164 2002
 
SANDISK 3D LLC (6)
6,185,122 Vertically stacked field programmable nonvolatile memory and method of fabrication 485 1999
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6,627,530 Patterning three dimensional structures 218 2000
6,420,215 Three-dimensional memory array and method of fabrication 499 2001
6,888,750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 253 2001
6,483,736 Vertically stacked field programmable nonvolatile memory and method of fabrication 263 2001
 
SAMSUNG ELECTRONICS CO., LTD. (5)
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6,894,305 Phase-change memory devices with a self-heater structure 214 2004
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2005/0215,009 Methods of forming phase-change memory devices 188 2005
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SILICON STORAGE TECHNOLOGY, INC. (4)
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ENERGY CONVERSION DEVICES, INC. (3)
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QIMONDA AG (3)
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SAIFUN SEMICONDUCTORS LTD. (2)
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Actel Corporation (1)
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AGILENT TECHNOLOGIES, INC. (1)
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GOOGLE INC. (1)
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HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (1)
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INFINEON TECHNOLOGIES AG (1)
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RENESAS TECHNOLOGY CORP. (1)
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RHOMBUS, INC. (1)
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RICOH COMPANY, LTD. (1)
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SCIENCE APPLICATIONS INTERNATIONAL CORPORATION (1)
6,903,362 Phase change switches and circuits coupling to electromagnetic waves containing phase change switches 152 2004
 
SPANSION LLC (1)
6,639,849 Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell 254 2003
 
TEXAS INSTRUMENTS INCORPORATED (1)
6,545,903 Self-aligned resistive plugs for forming memory cell with phase change material 221 2001
 
The Procter & Gamble Company (1)
7,132,675 Programmable conductor memory cell structure and method therefor 161 2004
 
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