Vacuum jacketed electrode for phase change memory element

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7687307
APP PUB NO 20090098678A1
SERIAL NO

12335801

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device having a vacuum jacket around the first electrode element for improved thermal isolation. The memory unit includes a first electrode element; a phase change memory element in contact with the first electrode element; a dielectric fill layer surrounding the phase change memory element and the first electrode element, wherein the dielectric layer is spaced from the first electrode element to define a chamber between the first electrode element and the dielectric fill layer; and wherein the phase change memory layer is sealed to the dielectric fill layer to define a thermal isolation jacket around the first electrode element.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MACRONIX INTERNATIONAL CO., LTD.HSINCHU2736

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Dobbs Ferry, US 118 6138

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SILICON STORAGE TECHNOLOGY, INC. (4)
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The Procter & Gamble Company (1)
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ROUND ROCK RESEARCH, LLC (29)
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6420725 Method and apparatus for forming an integrated circuit electrode having a reduced contact area 379 1995
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6150253 Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same 269 1997
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6104038 Method for fabricating an array of ultra-small pores for chalcogenide memory cells 219 1999
6114713 Integrated circuit memory cell having a small active area and method of forming same 249 1999
6189582 Small electrode for a chalcogenide switching device and method for fabricating same 252 1999
6153890 Memory cell incorporating a chalcogenide element 263 1999
6287887 Method for fabricating a small area of contact between electrodes 215 2000
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QIMONDA AG (1)
6420216 Fuse processing using dielectric planarization pillars 211 2000
 
SANDISK TECHNOLOGIES LLC (6)
6185122 Vertically stacked field programmable nonvolatile memory and method of fabrication 554 1999
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6627530 Patterning three dimensional structures 278 2000
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6888750 Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication 294 2001
6483736 Vertically stacked field programmable nonvolatile memory and method of fabrication 291 2001
 
MACRONIX INTERNATIONAL CO., LTD. (35)
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6320786 Method of controlling multi-state NROM 310 2001
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6579760 Self-aligned, programmable phase change memory 295 2002
6864503 Spacer chalcogenide memory method and device 226 2002
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2006/0286,709 Manufacturing methods for thin film fuse phase change ram 214 2005
2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 178 2005
2006/0110,878 Side wall active pin memory and manufacturing method 237 2005
2007/0111,429 Method of manufacturing a pipe shaped phase change memory 170 2006
2007/0115,794 Thermal isolation for an active-sidewall phase change memory cell 163 2006
2007/0108,431 I-shaped phase change memory cell 181 2006
2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 161 2006
2007/0117,315 Memory cell device and manufacturing method 180 2006
2007/0154,847 Chalcogenide layer etching method 164 2006
2007/0126,040 Vacuum cell thermal isolation for a phase change memory device 166 2006
2007/0158,862 Vacuum jacketed electrode for phase change memory element 161 2006
2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 163 2006
2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 176 2006
2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 176 2006
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2007/0158,632 Method for Fabricating a Pillar-Shaped Phase Change Memory Element 165 2006
2007/0158,633 Method for Forming Self-Aligned Thermal Isolation Cell for a Variable Resistance Memory Array 171 2006
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INTEL CORPORATION (10)
6501111 Three-dimensional (3D) programmable device 413 2000
6429064 Reduced contact area of sidewall conductor 388 2000
6555860 Compositionally modified resistive electrode 367 2001
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* 6998289 Multiple layer phase-change memory 51 2002
6744088 Phase change memory device on a planar composite layer 248 2002
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LEIDOS, INC. (1)
6903362 Phase change switches and circuits coupling to electromagnetic waves containing phase change switches 166 2004
 
TEXAS INSTRUMENTS INCORPORATED (1)
6545903 Self-aligned resistive plugs for forming memory cell with phase change material 236 2001
 
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SAIFUN SEMICONDUCTORS LTD. (1)
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OVONYX, INC. (4)
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RHOMBUS, INC. (1)
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* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
SAMSUNG ELECTRONICS CO., LTD. (1)
9029828 Phase-change memory devices including thermally-isolated phase-change layers and methods of fabricating the same 0 2013
* Cited By Examiner

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