Trench MOSFET and method of manufacture utilizing four masks

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United States of America Patent

PATENT NO 7687352





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In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
Inpower Semiconductor Co., Ltd.TAI PO NT, HK1

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Inventor Name Address # of filed Patents Total Citations
Chen, Tai Chiang TianJin, CN 4 43
Lv, Long TianJin, CN 3 41
Su, Shih Tzung Shulin, TW 3 41
Sun, Poi Torrance, US 3 41
Tu, Kao Way Jhonghe, TW 4 41
Wang, Xin TianJin, CN 587 5072
Zeng, Jun Torrance, US 174 1409

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