Trench MOSFET and method of manufacture utilizing four masks

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7687352
APP PUB NO 20090085074A1
SERIAL NO

11866350

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Abstract

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In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
Inpower Semiconductor Co., Ltd.TAI PO NT, HK1

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Tai Chiang TianJin, CN 4 37
Lv, Long TianJin, CN 3 35
Su, Shih Tzung Shulin, TW 3 35
Sun, Poi Torrance, US 3 35
Tu, Kao Way Jhonghe, TW 4 35
Wang, Xin TianJin, CN 459 4253
Zeng, Jun Torrance, US 144 1267

Cited Art Landscape

Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2007/0287,275 METHOD FOR FABRICATING DOPED POLYSILICON LINES 3 2007
 
INTERNATIONAL RECTIFIER CORPORATION (1)
* 2007/0042,552 Method for fabricating a semiconductor device 5 2006
 
Semiconductor Energy Laboratory Co., Ltd. (1)
* 5604137 Method for forming a multilayer integrated circuit 104 1995
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 2008/0233,693 COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) DEVICES INCLUDING A THIN-BODY CHANNEL AND DUAL GATE DIELECTRIC LAYERS AND METHODS OF MANUFACTURING THE SAME 7 2008
 
Advanced Analogic Technologies, Inc. (1)
* 2004/0191,994 Trench transistor with chained implanted body 18 2004
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Inpower Semiconductor Co., Ltd. (2)
7799642 Trench MOSFET and method of manufacture utilizing two masks 0 2007
* 2009/0085,099 TRENCH MOSFET AND METHOD OF MANUFACTURE UTILIZING THREE MASKS 4 2007
 
Excelliance MOS Corporation (1)
8664714 Power MOSFET 1 2012
* Cited By Examiner

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