Trench MOSFET and method of manufacture utilizing four masks
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United States of America Patent
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Mar 30, 2010
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N/A
app pub date -
Oct 2, 2007
filing date -
Oct 2, 2007
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Abstract
In accordance with the invention, a trench MOSFET semiconductor device is manufactured in accordance with a process comprising the steps of: providing a heavily doped N+ silicon substrate; utilizing a first mask to define openings for the trench gate and termination; utilizing a second mask as a source mask with openings determining the size and shape of a diffused source junction depth; utilizing a third mask as a contact mask to define contact hole openings; and utilizing a fourth mask as a metal mask, whereby only the first, second, third and fourth masks are utilized in the manufacture of the trench MOSFET semiconductor device.
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