Methods of depositing electrically active doped crystalline Si-containing films
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United States of America Patent
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Mar 30, 2010
Grant Date -
Sep 14, 2006
app pub date -
Jan 30, 2006
filing date -
Feb 4, 2005
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Abstract
of an electrically active dopant. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.
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