Semiconductor device having impurity region
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United States of America Patent
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Mar 30, 2010
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app pub date -
Feb 7, 2005
filing date -
Feb 12, 1998
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Abstract
To provide a semiconductor device that can effectively suppress the short channel effect without deterioration of carrier migration, an impurity ion is added from a direction of the <110> axis with respect to a silicon substrate on forming a punch through stopper under the gate electrode. In this invention, because the addition of the impurity is conducted by utilizing the principal of channeling, the impurity can be added with a small amount of scattering suppressing damage on the surface of the silicon substrate. A channel forming region having an extremely small impurity concentration and substantially no crystallinity disorder is formed.
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