Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones
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United States of America Patent
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Mar 30, 2010
Grant Date -
Feb 5, 2009
app pub date -
Jul 23, 2008
filing date -
Sep 30, 2003
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.
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