Method for programming a memory device suitable to minimize floating gate coupling and memory device
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United States of America Patent
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Mar 30, 2010
Grant Date -
Oct 25, 2007
app pub date -
Apr 2, 2007
filing date -
Mar 31, 2006
priority date (Note) -
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Abstract
Embodiment of a method for programming a memory device of the type comprising a matrix of memory cells divided in buffers of cells capacitively uncoupled from each other, the method comprising: first programming of said cells belonging to a buffer; second programming of said cells belonging to said buffer; said step of first programming occurs with a ramp gate voltage having first pitch and programs said cells of said buffer with higher threshold distribution and said step of second programming occurs with a ramp gate voltage having pitch lower than the pitch.
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