US Patent No: 7,688,638

Number of patents in Portfolio can not be more than 2000

Faster programming of multi-level non-volatile storage through reduced verify operations

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ALSO PUBLISHED AS: 20090147573
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Importance

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Abstract

Programming speed for multi-level non-volatile storage elements is increased by reducing the number of verify operations. In one approach, verify operations are initially performed for the highest state less frequently than for other, lower states based on a recognition that a wider threshold voltage distribution for the highest state can be tolerated. After a number of additional programming pulses are applied, the frequency with which the verify operations are performed for the highest state increases. For example, for a four-level device in which state C is the highest state, C-state verify operations can be started when a first B-state element has been programmed and an additional number of program pulses have been applied. The C-state verify operations can be performed after every other program pulse until a certain number of C-state elements have been fully programmed, after which the C-state verify operations can be performed after every program pulse.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SANDISK TECHNOLOGIES INC.PLANO, TX1506

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hemink, Gerrit Jan Yokohama, JP 119 773

Cited Art

Patent Info (Count) # Cites Year
 
SANDISK TECHNOLOGIES INC. (12)
6,222,762 Multi-state memory 678 1997
6,738,289 Non-volatile memory with improved programming and method therefor 108 2001
7,196,931 Non-volatile memory and method with reduced source line bias errors 53 2002
6,859,397 Source side self boosting technique for non-volatile memory 223 2003
7,237,074 Tracking cells for a memory system 82 2003
6,917,542 Detecting over programmed memory 40 2003
7,023,736 Non-volatile memory and method with improved sensing 103 2003
7,120,051 Pipelined programming of non-volatile memories using early data 72 2004
7,046,568 Memory sensing circuit and method for low voltage operation 126 2004
7,196,928 Compensating for coupling during read operations of non-volatile memory 158 2005
7,224,614 Methods for improved program-verify operations in non-volatile memories 35 2005
7,254,071 Flash memory devices with trimmed analog voltages 19 2006
 
KABUSHIKI KAISHA TOSHIBA (4)
5,570,315 Multi-state EEPROM having write-verify control circuit 617 1994
5,774,397 Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state 434 1996
6,046,935 Semiconductor device and memory system 592 1999
6,643,188 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell 223 2002
 
SAMSUNG ELECTRONICS CO., LTD. (3)
5,768,191 Methods of programming multi-state integrated circuit memory devices 102 1996
7,054,193 Non-uniform programming pulse width for writing of multi-bit-per-cell memories 60 2004
7,054,199 Multi level flash memory device and program method 45 2004
 
SAIFUN SEMICONDUCTORS LTD. (2)
6,937,521 Programming and erasing methods for a non-volatile memory cell 21 2002
2007/0177,428 Memory circuit arrangement and method for reading and/or verifying the status of memory cells of a memory cell array 3 2006
 
SANDISK CORPORATION (2)
2006/0140,007 Non-volatile memory and method with shared processing for an aggregate of read/write circuits 151 2004
7,173,859 Faster programming of higher level states in multi-level cell flash memory 79 2005
 
SPANSION LLC (2)
6,343,033 Variable pulse width memory programming 61 2000
7,009,887 Method of determining voltage compensation for flash memory devices 4 2004
 
AGERE SYSTEMS GUARDIAN CORP. (1)
6,433,714 Apparatus and method for precision trimming of a semiconductor device 9 2000
 
ARTEMIS ACQUISITION LLC (1)
6,714,448 Method of programming a multi-level memory device 22 2002
 
INTEL CORPORATION (1)
7,085,341 Counter with non-uniform digit base 8 2003
 
MICRON TECHNOLOGY, INC. (1)
6,366,496 Method for programming multi-level non-volatile memories by controlling the gate voltage 67 2000

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (1)
8,223,551 Soft landing for desired program threshold voltage 1 2009
 
SANDISK TECHNOLOGIES INC. (1)
8,274,838 Programming non-volatile memory with bit line voltage step up 0 2010

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