Method for manufacturing semiconductor device
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United States of America Patent
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Apr 6, 2010
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N/A
app pub date -
Feb 2, 2004
filing date -
Feb 5, 2003
priority date (Note) -
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Abstract
An insulating film is formed as a pore-wall protective film (103) on pore walls in a porous layer (102) by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have film properties as a protective film.
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