Phase-changeable memory devices including an adiabatic layer
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United States of America Patent
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Apr 6, 2010
Grant Date -
Feb 23, 2006
app pub date -
Jul 29, 2005
filing date -
Aug 17, 2004
priority date (Note) -
Expired
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Abstract
Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
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