Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
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United States of America Patent
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Apr 6, 2010
Grant Date -
Aug 23, 2007
app pub date -
Aug 2, 2006
filing date -
Feb 21, 2006
priority date (Note) -
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Abstract
Programming a NVM memory cell such as an NROM cell by using hot hole injection (HHI), followed by channel hot electron (CHE) injection. CHE injection increases the threshold voltage (Vt) of bits of memory cells that were disturbed (unnecessarily programmed) in HHI programming step. Page Write may be performed using a combination of only HHI, followed by CHE without any Erase.
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