Multi-level memory cell having phase change element and asymmetrical thermal boundary
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United States of America Patent
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Apr 13, 2010
Grant Date -
Nov 29, 2007
app pub date -
Aug 13, 2007
filing date -
Jun 17, 2005
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Abstract
A multi-level, phase change memory cell has first and second thermal isolation materials having different thermal conductivity properties situated in heat-conducting relation to first and second boundaries of the phase change material. Accordingly, when an electrical current is applied to raise the temperature of the memory material, heat is drawn away from the memory material asymmetrically along a line orthogonal to electric field lines between the electrodes.
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