Reducing programming error in memory devices
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United States of America Patent
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Apr 13, 2010
Grant Date -
Apr 23, 2009
app pub date -
May 10, 2007
filing date -
May 12, 2006
priority date (Note) -
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Abstract
D) to be used in storing the data. A part of the data is written to a first analog memory cell in the array by applying to the analog memory cell a first voltage level selected from the constellation. After writing the part of the data to the first analog memory cell, a second voltage level that does not belong to the constellation is read from the first analog memory cell. A modification to be made in writing to one or more of the analog memory cells in the array is determined responsively to the second voltage level, and data are written to the one or more of the analog memory cells subject to the modification.
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