Method of manufacturing (110) silicon wafer

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United States of America Patent

PATENT NO 7699050
APP PUB NO 20090084373A1
SERIAL NO

11992473

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Abstract

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The present invention provides a method for slicing a silicon single crystal ingot having a plane direction (110) by a wire saw to manufacture a (110) silicon wafer, wherein slicing is performed in such a manner that each angle formed between a traveling direction of a wire in the wire saw and a [−112 ] direction and a [1-12] direction in the (110) silicon single crystal ingot or a direction crystallographically equivalent to the directions exceeds 30°. As a result, the method for manufacturing the (110) silicon wafer that can suppress occurrence of breaking at the time of slicing and improve a production yield ratio can be provided.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU HANDOTAI CO LTD2-1 OHTEMACHI 2-CHOME CHIYODA-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oishi, Hiroshi Fukushima, JP 82 922

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