Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
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United States of America Patent
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Apr 20, 2010
Grant Date -
Jun 10, 2004
app pub date -
Aug 22, 2003
filing date -
Jun 5, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.
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