SRAM device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7700999
APP PUB NO 20090008707A1
SERIAL NO

11773510

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit device has a base area defining a longitudinal axis. Four in-line transistors, which are NMOS transistors in exemplary embodiments, are each centered on the longitudinal axis. Two off-set transistors, which are PMOS transistors in exemplary embodiments, are off-set to first and second sides of the longitudinal axis, respectively.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INFINEON TECHNOLOGIES AGMUNICH7375

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Schulz, Thomas Heverlee, BE 112 1047

Cited Art Landscape

Patent Info (Count) # Cites Year
 
POLARIS INNOVATIONS LIMITED (2)
6038164 SRAM cell configuration and method for its fabrication 3 1998
* 6472767 Static random access memory (SRAM) 3 1999
 
INTEGRATED DEVICE TECHNOLOGY, INC. (1)
* 5831899 Local interconnect structure and process for six-transistor SRAM cell 30 1997
 
RENESAS ELECTRONICS CORPORATION (1)
* 6670642 Semiconductor memory device using vertical-channel transistors 51 2002
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 5550396 Vertical field effect transistor with a trench structure 133 1995
 
INFINEON TECHNOLOGIES AG (1)
6882007 SRAM memory cell, memory cell arrangement and method for fabricating a memory cell arrangement 5 2003
* Cited By Examiner

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