US Patent No: 7,700,999

Number of patents in Portfolio can not be more than 2000

SRAM device

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ALSO PUBLISHED AS: 20090008707
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Importance

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Abstract

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An integrated circuit device has a base area defining a longitudinal axis. Four in-line transistors, which are NMOS transistors in exemplary embodiments, are each centered on the longitudinal axis. Two off-set transistors, which are PMOS transistors in exemplary embodiments, are off-set to first and second sides of the longitudinal axis, respectively.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INFINEON TECHNOLOGIES AGMUNICH5442

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Schulz, Thomas Austin, TX 141 491

Cited Art Landscape

Patent Info (Count) # Cites Year
 
QIMONDA AG (2)
6,038,164 SRAM cell configuration and method for its fabrication 2 1998
6,472,767 Static random access memory (SRAM) 2 1999
 
INFINEON TECHNOLOGIES AG (1)
6,882,007 SRAM memory cell, memory cell arrangement and method for fabricating a memory cell arrangement 4 2003
 
INTEGRATED DEVICE TECHNOLOGY, INC. (1)
5,831,899 Local interconnect structure and process for six-transistor SRAM cell 25 1997
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
5,550,396 Vertical field effect transistor with a trench structure 119 1995
 
RENESAS ELECTRONICS CORPORATION (1)
6,670,642 Semiconductor memory device using vertical-channel transistors 47 2002

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