Methods for fabricating phase changeable memory devices

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United States of America Patent

PATENT NO 7704787
APP PUB NO 20060281217A1
SERIAL NO

11466302

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Abstract

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Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that includes nitrogen atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystalline structure.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hideki, Horii Seoul, KR 15 734
Park, Jeong-hee Gyeonggi-do, KR 39 778

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