Method of determining substrate etch depth
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United States of America Patent
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Apr 27, 2010
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N/A
app pub date -
Jun 15, 2005
filing date -
Dec 20, 2004
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Abstract
A method of monitoring, in real time, the depth to which a process sample is etched by an etching procedure involving investigating a sample substrate that has a patterned surface which, when electromagnetic radiation in an appropriate wavelength range is caused to reflect from, demonstrates lateral interference effects, such that when a frequency transform is applied to spectroscopic reflection data, three distinguishable peaks occur, at least for some range of pattern depth in the sample surface.
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