Memory elements having patterned electrodes and method of forming the same
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United States of America Patent
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May 4, 2010
Grant Date -
Oct 26, 2006
app pub date -
Apr 22, 2005
filing date -
Apr 22, 2005
priority date (Note) -
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Abstract
A memory element having a resistance variable material and methods for forming the same are provided. The method includes forming a plurality of first electrodes over a substrate and forming a blanket material stack over the first electrodes. The stack includes a plurality of layers, at least one layer of the stack includes a resistance variable material. The method also includes forming a first conductive layer on the stack and etching the conductive layer and at least one of the layers of the stack to form a first pattern of material stacks. The etched first conductive layer forming a plurality of second electrodes with a portion of the resistance variable material located between each of the first and second electrodes.
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