Photodiode and photodiode array with improved performance characteristics
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United States of America Patent
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May 4, 2010
Grant Date -
Mar 4, 2010
app pub date -
Aug 27, 2008
filing date -
Aug 27, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is a photodiode and/or photodiode array, having a p+ diffused area that is smaller than the area of a mounted scintillator crystal, designed and manufactured with improved device characteristics, and more particularly, has relatively low dark current, low capacitance and improved signal-to-noise ratio characteristics. More specifically, the present invention is a photodiode and/or photodiode array that includes a metal shield for reflecting light back into a scintillator crystal, thus allowing for a relatively small p+ diffused area.
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