Semiconductor memory device having low jitter source synchronous interface and clocking method thereof

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United States of America Patent

PATENT NO 7710818
APP PUB NO 20080130397A1
SERIAL NO

11950279

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Abstract

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Provided are a semiconductor memory device having a source synchronous interface capable of reducing jitter while minimizing overhead and a clocking method thereof. The semiconductor memory device comprises a phase locked loop (PLL) circuit receiving a first external clock signal for a command and address signal and generating a first internal clock signal, a first delay locked loop (DLL) circuit receiving a second external clock signal for predetermined bits of data and the first internal clock signal and generating a second internal clock signal locked to the second external clock signal, and a second DLL circuit receiving a third external clock signal for the remaining bits of the data and the first internal clock signal and generating a third internal clock signal locked to the third external clock signal.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD416 MAETAN-DONG YEONGTONG-GU GYEONGGI-DO SUWON-SI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bae, Seung-Jun Daejeon, KR 77 1119

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