Periodic plasma annealing in an ALD-type process
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United States of America Patent
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May 11, 2010
Grant Date -
Nov 6, 2008
app pub date -
May 2, 2007
filing date -
May 2, 2007
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Abstract
Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited reducing species for a period of time. Periodically, the substrate is contacted with a vapor phase pulse of one or more plasma-excited reducing species for a longer period of time. The steps are repeated until a metal thin film of a desired thickness is formed over the substrate.
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