Thin film transistor and method for fabricating the same
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United States of America Patent
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May 11, 2010
Grant Date -
May 26, 2005
app pub date -
Nov 17, 2004
filing date -
Nov 22, 2003
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Abstract
A thin film transistor formed by using a metal induced lateral crystallization process and a method for fabricating the same. The thin film transistor comprises an insulating substrate, an active layer formed of polycrystalline silicon and having source/drain regions and a channel region, and a gate electrode formed on a gate insulating layer. The active layer has at least two metal induced lateral crystallization (MILC) regions.
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