Phase-change TaN resistor based triple-state/multi-state read only memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 11, 2010
Grant Date -
Sep 25, 2008
app pub date -
Apr 24, 2008
filing date -
Jul 29, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully