Method for photomask fabrication utilizing a carbon hard mask

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United States of America Patent

PATENT NO 7718539
APP PUB NO 20080131789A1
SERIAL NO

11565271

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Abstract

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Methods for forming a photomask using a carbon hard mask are provided. In one embodiment, a method of forming a photomask includes etching a chromium layer through a patterned carbon hard mask layer in the presence of a plasma formed from a process gas containing chlorine and carbon monoxide.

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Patent Owner(s)

Patent OwnerAddress
SONY CORPORATION1-7-1 KONAN MINATO-KU TOKYO 1080075 ?1080075

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kumar, Ajay Cupertino, US 493 11870

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