Sensing circuit for PCRAM applications
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United States of America Patent
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May 18, 2010
Grant Date -
Mar 18, 2010
app pub date -
Sep 12, 2008
filing date -
Sep 12, 2008
priority date (Note) -
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Abstract
A sensing method for a memory cell as described herein includes selecting a memory cell. A first bias applied to the memory cell induces a first response in the memory cell. A second bias applied to the memory cell induces a second response in the memory cell, the second bias different from the first bias. The method includes determining a data value stored in the memory cell based on a difference between the first and second responses and a predetermined reference.
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