Organometallic compounds and methods of forming thin films including the use of the same

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United States of America Patent

PATENT NO 7722926
APP PUB NO 20070031597A1
SERIAL NO

11460485

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Abstract

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The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1):are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Kyu-Ho Seongnam-si, KR 34 655
Jung, Jae-Sun Gongju-si, KR 8 192
Kim, Byung-Soo Daejeon, KR 81 1075
Kim, Ki-Chul Seongnam-si, KR 105 1470
Lim, Han-Jin Seoul, KR 51 420
Lim, Jae-Soon Seoul, KR 48 514
Yoo, Seung-Ho Daejeon, KR 3 14

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