Microelectronic assembly with back side metallization and method for forming the same

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United States of America Patent

PATENT NO 7723224
APP PUB NO 20070293033A1
SERIAL NO

11453763

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Abstract

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A method is provided for forming a microelectronic assembly. A contact structure (46) is formed over a first side of a first substrate (20) having a microelectronic device formed over a second side thereof. The contact structure is electrically connected to the microelectronic device. A non-solderable layer (52) is formed over at least a portion of the contact structure and at least a portion of the first substrate. The contact structure and a second substrate (62) are interconnected with solder (68).

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN XINGUODU TECHNOLOGY CO LTD518000 17B JINSONG BUILDING TAIRAN 4TH ROAD SHATOU STREET FUTIAN DISTRICT SHENZHEN CITY GUANGDONG PROVINCE SHENZHEN CITY GUANGDONG PROVINCE 518000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bowles, Philip H Fountain Hills, US 28 472
Campbell, Jan McCaskill, US 1 7
Daly, Terry K Gilbert, US 6 59
Fender, Jason R Chandler, US 11 95
Hill, Darrell G Tempe, US 41 568
Ramanathan, Lakshmi N Chandler, US 10 366
Tracht, Neil T Mesa, US 7 142

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