Layered resistance variable memory device and method of fabrication
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United States of America Patent
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May 25, 2010
Grant Date -
Jan 11, 2007
app pub date -
May 31, 2006
filing date -
Feb 20, 2002
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Abstract
composition. According to another embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between chalcogenide glass layers and further having a silver layer above at least one of said chalcogenide glass layers and a conductive adhesion layer above said silver layer. According to the another embodiment of the invention, a resistance variable memory element is provided having a first chalcogenide glass layer, a silver layer over said chalcogenide glass layer, a second chalcogenide glass layer over said silver layer, a second silver layer over said second chalcogenide glass layer, and a conductive adhesion layer over said a second silver layer.
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